Device performance of in situ steam generated gate dielectric nitrided by remote plasma nitridation

H. N. Al-Shareef*, A. Karamcheti, T. Y. Luo, G. Bersuker, Graham Brown, R. W. Murto, Marc Jackson, H. R. Huff, P. Kraus, D. Lopes, C. Olsen, G. Miner

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

17 Scopus citations


In situ steam generated (ISSG) oxides have recently attracted interest for use as gate dielectrics because of their demonstrated reliability improvement over oxides formed by dry oxidation. [G. Minor, G. King, H. S. Joo, E. Sanchez, Y. Yokota, C. Chen, D. Lopes, and A. Balakrishna, Electrochem. Soc. Symp. Proc. 99-10, 3 (1999); T. Y. Luo, H. N. Al-Shareef, G. A. Brown, M. Laughery, V. Watt, A. Karamcheti, M. D. Jackson, and H. R. Huff, Proc. SPIE 4181, 220 (2000).] We show in this letter that nitridation of ISSG oxide using a remote plasma decreases the gate leakage current of ISSG oxide by an order of magnitude without significantly degrading transistor performance. In particular, it is shown that the peak normalized transconductance of n-channel devices with an ISSG oxide gate dielectric decreases by only 4% and the normalized drive current by only 3% after remote plasma nitridation (RPN). In addition, it is shown that the reliability of the ISSG oxide exhibits only a small degradation after RPN. These observations suggest that the ISSG/RPN process holds promise for gate dielectric applications.

Original languageEnglish (US)
Pages (from-to)3875-3877
Number of pages3
JournalApplied Physics Letters
Issue number24
StatePublished - Jun 11 2001
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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