Dewetting of resist/metal bilayers in resist stripping processes

Yihong Wu; Peiwen Qiao; Towchong Chong; Teck Seng Low; Hong Xie; Ping Luo; Zaibing Guo; Jinjun Qiu

doi:10.1063/1.1374234

Dewetting of resist/metal bilayers in resist stripping processes

Yihong Wu^*, Peiwen Qiao, Towchong Chong, Teck Seng Low, Hong Xie, Ping Luo, Zaibing Guo, Jinjun Qiu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We report the observations of dewetting of resist/metal bilayers in a resist stripping process of nanofabrication in O ₂ plasma. The initiation of the dewetting process is tentatively associated with local heating caused by surface plasmon induced in metallic nanoparticles or nanowires. The surface patterns thus formed differ substantially from all the dewetting patterns reported so far, and they resemble trees at micrometer scale. The possible mechanism for the formation of this kind striking patterns is discussed and its implication to future nanoelectronics manufacturing is addressed.

Original language	English (US)
Pages (from-to)	3361-3363
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	21
DOIs	https://doi.org/10.1063/1.1374234
State	Published - May 21 2001

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1374234

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title = "Dewetting of resist/metal bilayers in resist stripping processes",

abstract = " We report the observations of dewetting of resist/metal bilayers in a resist stripping process of nanofabrication in O 2 plasma. The initiation of the dewetting process is tentatively associated with local heating caused by surface plasmon induced in metallic nanoparticles or nanowires. The surface patterns thus formed differ substantially from all the dewetting patterns reported so far, and they resemble trees at micrometer scale. The possible mechanism for the formation of this kind striking patterns is discussed and its implication to future nanoelectronics manufacturing is addressed.",

author = "Yihong Wu and Peiwen Qiao and Towchong Chong and Low, {Teck Seng} and Hong Xie and Ping Luo and Zaibing Guo and Jinjun Qiu",

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T1 - Dewetting of resist/metal bilayers in resist stripping processes

AU - Wu, Yihong

AU - Qiao, Peiwen

AU - Chong, Towchong

AU - Low, Teck Seng

AU - Xie, Hong

AU - Luo, Ping

AU - Guo, Zaibing

AU - Qiu, Jinjun

PY - 2001/5/21

Y1 - 2001/5/21

N2 - We report the observations of dewetting of resist/metal bilayers in a resist stripping process of nanofabrication in O 2 plasma. The initiation of the dewetting process is tentatively associated with local heating caused by surface plasmon induced in metallic nanoparticles or nanowires. The surface patterns thus formed differ substantially from all the dewetting patterns reported so far, and they resemble trees at micrometer scale. The possible mechanism for the formation of this kind striking patterns is discussed and its implication to future nanoelectronics manufacturing is addressed.

AB - We report the observations of dewetting of resist/metal bilayers in a resist stripping process of nanofabrication in O 2 plasma. The initiation of the dewetting process is tentatively associated with local heating caused by surface plasmon induced in metallic nanoparticles or nanowires. The surface patterns thus formed differ substantially from all the dewetting patterns reported so far, and they resemble trees at micrometer scale. The possible mechanism for the formation of this kind striking patterns is discussed and its implication to future nanoelectronics manufacturing is addressed.

UR - http://www.scopus.com/inward/record.url?scp=0035927122&partnerID=8YFLogxK

U2 - 10.1063/1.1374234

DO - 10.1063/1.1374234

M3 - Article

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VL - 78

SP - 3361

EP - 3363

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

Dewetting of resist/metal bilayers in resist stripping processes

Abstract

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