Dilute-As GaNAs semiconductor for visible emitters

Chee Keong Tan; Jing Zhang; Xiao Hang Li; Guangyu Liu; Nelson Tansu

doi:10.1109/IPCon.2012.6358812

Dilute-As GaNAs semiconductor for visible emitters

Chee Keong Tan^*, Jing Zhang, Xiao Hang Li, Guangyu Liu, Nelson Tansu

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

First-principle analysis of the band structure for dilute-As GaN _1-xAs_x semiconductor was carried out, and the finding showed the direct bandgap properties of this alloy covering the entire visible spectral regime applicable for new visible emitters.

Original language	English (US)
Title of host publication	2012 IEEE Photonics Conference, IPC 2012
Pages	695-696
Number of pages	2
DOIs	https://doi.org/10.1109/IPCon.2012.6358812
State	Published - 2012
Externally published	Yes
Event	25th IEEE Photonics Conference, IPC 2012 - Burlingame, CA, United States Duration: Sep 23 2012 → Sep 27 2012

Other

Other	25th IEEE Photonics Conference, IPC 2012
Country/Territory	United States
City	Burlingame, CA
Period	09/23/12 → 09/27/12

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/IPCon.2012.6358812

Cite this

@inproceedings{96a3301090ee4126a12298789ea1de93,

title = "Dilute-As GaNAs semiconductor for visible emitters",

abstract = "First-principle analysis of the band structure for dilute-As GaN 1-xAsx semiconductor was carried out, and the finding showed the direct bandgap properties of this alloy covering the entire visible spectral regime applicable for new visible emitters.",

author = "Tan, {Chee Keong} and Jing Zhang and Li, {Xiao Hang} and Guangyu Liu and Nelson Tansu",

year = "2012",

doi = "10.1109/IPCon.2012.6358812",

language = "English (US)",

isbn = "9781457707315",

pages = "695--696",

booktitle = "2012 IEEE Photonics Conference, IPC 2012",

note = "25th IEEE Photonics Conference, IPC 2012 ; Conference date: 23-09-2012 Through 27-09-2012",

}

TY - GEN

T1 - Dilute-As GaNAs semiconductor for visible emitters

AU - Tan, Chee Keong

AU - Zhang, Jing

AU - Li, Xiao Hang

AU - Liu, Guangyu

AU - Tansu, Nelson

PY - 2012

Y1 - 2012

N2 - First-principle analysis of the band structure for dilute-As GaN 1-xAsx semiconductor was carried out, and the finding showed the direct bandgap properties of this alloy covering the entire visible spectral regime applicable for new visible emitters.

AB - First-principle analysis of the band structure for dilute-As GaN 1-xAsx semiconductor was carried out, and the finding showed the direct bandgap properties of this alloy covering the entire visible spectral regime applicable for new visible emitters.

UR - http://www.scopus.com/inward/record.url?scp=84871744223&partnerID=8YFLogxK

U2 - 10.1109/IPCon.2012.6358812

DO - 10.1109/IPCon.2012.6358812

M3 - Conference contribution

AN - SCOPUS:84871744223

SN - 9781457707315

SP - 695

EP - 696

BT - 2012 IEEE Photonics Conference, IPC 2012

T2 - 25th IEEE Photonics Conference, IPC 2012

Y2 - 23 September 2012 through 27 September 2012

ER -

Dilute-As GaNAs semiconductor for visible emitters

Abstract

Other

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this