Direct correlation of organic semiconductor film structure to field-effect mobility

Dean M. DeLongchamp; Sharadha Sambasivan; Daniel A. Fischer; Eric K. Lin; Paul Chang; Amanda R. Murphy; Jean M.J. Fréchet; Vivek Subramanian

doi:10.1002/adma.200500263

Direct correlation of organic semiconductor film structure to field-effect mobility

Dean M. DeLongchamp^*, Sharadha Sambasivan, Daniel A. Fischer, Eric K. Lin, Paul Chang, Amanda R. Murphy, Jean M.J. Fréchet, Vivek Subramanian

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

74 Scopus citations

Abstract

The use of near-edge X-ray absorption fine structure (NEXAFS) spectroscopy to track the effects of thermal processing on the chemistry and structure of oligothiophene percursor films is demonstrated. A thermal treatment series was created by heating films to temperatures between 75°C and 300°C for 20 min and then cooling them to room temperature. To quantify chemical conversion, spectra were collected for the entire temperature-treatment sample series. The results show that the highest mobilities are obtained upto 250°C, even though the film is only slightly more than a monolayer thick by quantification of surface coverage.

Original language	English (US)
Pages (from-to)	2340-2344
Number of pages	5
Journal	Advanced Materials
Volume	17
Issue number	19
DOIs	https://doi.org/10.1002/adma.200500263
State	Published - Oct 4 2005
Externally published	Yes

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

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title = "Direct correlation of organic semiconductor film structure to field-effect mobility",

abstract = "The use of near-edge X-ray absorption fine structure (NEXAFS) spectroscopy to track the effects of thermal processing on the chemistry and structure of oligothiophene percursor films is demonstrated. A thermal treatment series was created by heating films to temperatures between 75°C and 300°C for 20 min and then cooling them to room temperature. To quantify chemical conversion, spectra were collected for the entire temperature-treatment sample series. The results show that the highest mobilities are obtained upto 250°C, even though the film is only slightly more than a monolayer thick by quantification of surface coverage.",

author = "DeLongchamp, {Dean M.} and Sharadha Sambasivan and Fischer, {Daniel A.} and Lin, {Eric K.} and Paul Chang and Murphy, {Amanda R.} and Fr{\'e}chet, {Jean M.J.} and Vivek Subramanian",

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doi = "10.1002/adma.200500263",

language = "English (US)",

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T1 - Direct correlation of organic semiconductor film structure to field-effect mobility

AU - DeLongchamp, Dean M.

AU - Sambasivan, Sharadha

AU - Fischer, Daniel A.

AU - Lin, Eric K.

AU - Chang, Paul

AU - Murphy, Amanda R.

AU - Fréchet, Jean M.J.

AU - Subramanian, Vivek

PY - 2005/10/4

Y1 - 2005/10/4

N2 - The use of near-edge X-ray absorption fine structure (NEXAFS) spectroscopy to track the effects of thermal processing on the chemistry and structure of oligothiophene percursor films is demonstrated. A thermal treatment series was created by heating films to temperatures between 75°C and 300°C for 20 min and then cooling them to room temperature. To quantify chemical conversion, spectra were collected for the entire temperature-treatment sample series. The results show that the highest mobilities are obtained upto 250°C, even though the film is only slightly more than a monolayer thick by quantification of surface coverage.

AB - The use of near-edge X-ray absorption fine structure (NEXAFS) spectroscopy to track the effects of thermal processing on the chemistry and structure of oligothiophene percursor films is demonstrated. A thermal treatment series was created by heating films to temperatures between 75°C and 300°C for 20 min and then cooling them to room temperature. To quantify chemical conversion, spectra were collected for the entire temperature-treatment sample series. The results show that the highest mobilities are obtained upto 250°C, even though the film is only slightly more than a monolayer thick by quantification of surface coverage.

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U2 - 10.1002/adma.200500263

DO - 10.1002/adma.200500263

M3 - Article

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SN - 0935-9648

VL - 17

SP - 2340

EP - 2344

JO - Advanced Materials

JF - Advanced Materials

IS - 19

ER -

Direct correlation of organic semiconductor film structure to field-effect mobility

Abstract

ASJC Scopus subject areas

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