Direct formation of wafer scale graphene thin layers on insulating substrates by chemical vapor deposition

Ching Yuan Su, Ang-Yu Lu, Chih Yu Wu, Yi Te Li, Keng Ku Liu, Wenjing Zhang, Shi Yen Lin, Zheng Yu Juang, Yuan Liang Zhong, Fu Rong Chen, Lain Jong Li*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

304 Scopus citations


Direct formation of high-quality and wafer scale graphene thin layers on insulating gate dielectrics such as SiO2 is emergent for graphene electronics using Si-wafer compatible fabrication. Here, we report that in a chemical vapor deposition process the carbon species dissociated on Cu surfaces not only result in graphene layers on top of the catalytic Cu thin films but also diffuse through Cu grain boundaries to the interface between Cu and underlying dielectrics. Optimization of the process parameters leads to a continuous and large-area graphene thin layers directly formed on top of the dielectrics. The bottom-gated transistor characteristics for the graphene films have shown quite comparable carrier mobility compared to the top-layer graphene. The proposed method allows us to achieve wafer-sized graphene on versatile insulating substrates without the need of graphene transfer.

Original languageEnglish (US)
Pages (from-to)3612-3616
Number of pages5
JournalNano Letters
Issue number9
StatePublished - Sep 14 2011
Externally publishedYes


  • Graphene
  • Raman spectroscopy
  • chemical vapor deposition
  • graphitization
  • transparent conductive film

ASJC Scopus subject areas

  • General Chemistry
  • Condensed Matter Physics
  • Mechanical Engineering
  • Bioengineering
  • General Materials Science


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