Direct growth of high-power InGaN/GaN quantum-disks-in-nanowires red light-emitting diodes on polycrystalline molybdenum substrates

Chao Zhao, Tien Khee Ng, Nini Wei, Aditya Prabaswara, Mohd S. Alias, Bilal Janjua, Chao Shen, Giuseppe Bernardo Consiglio, Ahmed Y. Alyamani, Munir M. El-Desouki, Boon S. Ooi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The first high-power InGaN/GaN quantum-disks-in-nanowires red (λ=705 nm) light-emitting diodes on metal substrates was demonstrated. The low turn-on voltage and high power were achieved through the direct growth of high-quality nanowires on TiN/Ti/Mo stack.

Original languageEnglish (US)
Title of host publication2016 Conference on Lasers and Electro-Optics, CLEO 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781943580118
DOIs
StatePublished - Dec 16 2016
Event2016 Conference on Lasers and Electro-Optics, CLEO 2016 - San Jose, United States
Duration: Jun 5 2016Jun 10 2016

Publication series

Name2016 Conference on Lasers and Electro-Optics, CLEO 2016

Other

Other2016 Conference on Lasers and Electro-Optics, CLEO 2016
Country/TerritoryUnited States
CitySan Jose
Period06/5/1606/10/16

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Direct growth of high-power InGaN/GaN quantum-disks-in-nanowires red light-emitting diodes on polycrystalline molybdenum substrates'. Together they form a unique fingerprint.

Cite this