Direct growth of lattice mismatched InP on GaAs substrate with AlAs/GaAs superlattice-induced lateral quasi-quantum-wire buffer

With the technological importance, the demand on the infrared photonic and high-speed electronic devices is increasing in line with the needs for InP substrate which is used for the platform to grow the device structure. However, the InP substrate is not only limited to small diameter but also has poor mechanical hardness which are the bottleneck in reducing the device fabrication cost. In this regard, various methods are proposed to obtain InP template which grown on cheap and robust substrates as an alternative to replace the native InP substrate. In this article, we report an InP layer directly grown on GaAs substrate with the help of AlAs/GaAs superlattice-induced lateral quasi-quantum-wire buffer. The InP layer exhibited enhanced material quality with low defect density as a result of strain relaxation induced by the lateral quasi-quantum wires. This result can give insight into the alternative route to create large and robust InP template for low cost InP-based device applications.