Abstract
An electronic method to measure the drift velocity and mobility of charge carriers in polymer thin film transistor has been developed. The measurement is based on the movement of a packet of carriers injected into the channel. This technique can be used to explore trap states and therefore obtain a comprehensive understanding of charge transport in these materials. Drift mobility of 0.52 cm2 V s is obtained from the transit time which is a factor of 3 higher than the field-effect transistor mobility. © 2006 American Institute of Physics.
Original language | English (US) |
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Journal | Applied Physics Letters |
Volume | 89 |
Issue number | 24 |
DOIs | |
State | Published - Dec 29 2006 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)