Direct observation of an ordered phase in (112̄0) plane InGaN alloy

Kazuhide Kusakabe; Takashi Yamazaki; Koji Kuramochi; Tokuma Furuzuki; Iwao Hashimoto; Shizutoshi Ando; Kazuhiro Ohkawa

doi:10.1143/JJAP.47.8783

Direct observation of an ordered phase in (112̄0) plane InGaN alloy

Kazuhide Kusakabe^*, Takashi Yamazaki, Koji Kuramochi, Tokuma Furuzuki, Iwao Hashimoto, Shizutoshi Ando, Kazuhiro Ohkawa

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

A polar-dependent phase with spontaneous atomic ordering is found in a nonpolar (112̄0) plane In_0.08Ga_0.92N film grown by metalorganic vapor-phase epitaxy. An atomic arrangement is a periodic sequence of group-III sublattices, such as In_0.04Ga_0.96N/In _0.12Ga_0.88N, that is only observed in a nitrogen polar region through systematic transmission electron microscopy investigation. Cathodoluminescence (CL) in the nitrogen polar region, i.e., spontaneously ordered atomic structure of InGaN, reveals anomalous emission behavior, specifically an S-shape-like (increase-decrease) temperature dependence of CL peak energy. It is suggested that the spontaneous ordered atomic structure of InGaN plays the role of a localized center owing to band gap shrinkage, which has been reported in other III-V alloy systems.

Original language	English (US)
Pages (from-to)	8783-8786
Number of pages	4
Journal	Japanese Journal of Applied Physics
Volume	47
Issue number	12
DOIs	https://doi.org/10.1143/JJAP.47.8783
State	Published - Dec 19 2008
Externally published	Yes

Keywords

InGaN
MOVPE
Phase ordering
TEM

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

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10.1143/JJAP.47.8783

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title = "Direct observation of an ordered phase in (11{\=2}0) plane InGaN alloy",

abstract = "A polar-dependent phase with spontaneous atomic ordering is found in a nonpolar (11{\=2}0) plane In0.08Ga0.92N film grown by metalorganic vapor-phase epitaxy. An atomic arrangement is a periodic sequence of group-III sublattices, such as In0.04Ga0.96N/In 0.12Ga0.88N, that is only observed in a nitrogen polar region through systematic transmission electron microscopy investigation. Cathodoluminescence (CL) in the nitrogen polar region, i.e., spontaneously ordered atomic structure of InGaN, reveals anomalous emission behavior, specifically an S-shape-like (increase-decrease) temperature dependence of CL peak energy. It is suggested that the spontaneous ordered atomic structure of InGaN plays the role of a localized center owing to band gap shrinkage, which has been reported in other III-V alloy systems.",

keywords = "InGaN, MOVPE, Phase ordering, TEM",

author = "Kazuhide Kusakabe and Takashi Yamazaki and Koji Kuramochi and Tokuma Furuzuki and Iwao Hashimoto and Shizutoshi Ando and Kazuhiro Ohkawa",

year = "2008",

month = dec,

day = "19",

doi = "10.1143/JJAP.47.8783",

language = "English (US)",

volume = "47",

pages = "8783--8786",

journal = "Japanese Journal of Applied Physics",

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publisher = "Japan Society of Applied Physics",

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TY - JOUR

T1 - Direct observation of an ordered phase in (112̄0) plane InGaN alloy

AU - Kusakabe, Kazuhide

AU - Yamazaki, Takashi

AU - Kuramochi, Koji

AU - Furuzuki, Tokuma

AU - Hashimoto, Iwao

AU - Ando, Shizutoshi

AU - Ohkawa, Kazuhiro

PY - 2008/12/19

Y1 - 2008/12/19

N2 - A polar-dependent phase with spontaneous atomic ordering is found in a nonpolar (112̄0) plane In0.08Ga0.92N film grown by metalorganic vapor-phase epitaxy. An atomic arrangement is a periodic sequence of group-III sublattices, such as In0.04Ga0.96N/In 0.12Ga0.88N, that is only observed in a nitrogen polar region through systematic transmission electron microscopy investigation. Cathodoluminescence (CL) in the nitrogen polar region, i.e., spontaneously ordered atomic structure of InGaN, reveals anomalous emission behavior, specifically an S-shape-like (increase-decrease) temperature dependence of CL peak energy. It is suggested that the spontaneous ordered atomic structure of InGaN plays the role of a localized center owing to band gap shrinkage, which has been reported in other III-V alloy systems.

AB - A polar-dependent phase with spontaneous atomic ordering is found in a nonpolar (112̄0) plane In0.08Ga0.92N film grown by metalorganic vapor-phase epitaxy. An atomic arrangement is a periodic sequence of group-III sublattices, such as In0.04Ga0.96N/In 0.12Ga0.88N, that is only observed in a nitrogen polar region through systematic transmission electron microscopy investigation. Cathodoluminescence (CL) in the nitrogen polar region, i.e., spontaneously ordered atomic structure of InGaN, reveals anomalous emission behavior, specifically an S-shape-like (increase-decrease) temperature dependence of CL peak energy. It is suggested that the spontaneous ordered atomic structure of InGaN plays the role of a localized center owing to band gap shrinkage, which has been reported in other III-V alloy systems.

KW - InGaN

KW - MOVPE

KW - Phase ordering

KW - TEM

UR - http://www.scopus.com/inward/record.url?scp=59349106930&partnerID=8YFLogxK

U2 - 10.1143/JJAP.47.8783

DO - 10.1143/JJAP.47.8783

M3 - Article

AN - SCOPUS:59349106930

SN - 0021-4922

VL - 47

SP - 8783

EP - 8786

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 12

ER -

Direct observation of an ordered phase in (112̄0) plane InGaN alloy

Abstract

Keywords

ASJC Scopus subject areas

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