Directly modulated 1.3 μm quantum dot lasers epitaxially grown on silicon

Daisuke Inoue, Daehwan Jung, Justin Norman, Yating Wan, Nobuhiko Nishiyama, Shigehisa Arai, Arthur C. Gossard, John E. Bowers

Research output: Contribution to journalArticlepeer-review

47 Scopus citations


We report the first demonstration of direct modulation of InAs/GaAs quantum dot (QD) lasers grown on on-axis (001) Si substrate. A low threading dislocation density GaAs buffer layer enables us to grow a high quality 5-layered QD active region on on-axis Si substrate. The active layer has p-modulation doped GaAs barrier layers with a hole concentration of 5 × 1017 cm-3to suppress gain saturation. Small-signal measurement on a 3 × 580 μm2 Fabry-Perot laser showed a 3dB bandwidth of 6.5 GHz at a bias current of 116 mA. A 12.5 Gbit/s non-return-to-zero signal modulation was achieved by directly probing the chip. Open eyes with an extinction ration of 3.3dB was observed at room temperature. The biterror- rate (BER) curve showed no error-floor up to BER of 1 × 10-13. 12 km single-mode fiber transmission experiments using the QD laser on Si showed a low power penalty of 1 dB at 5Gbit/s. These results demonstrate the potential for QD lasers epitaxially grown on Si to be used as a low-cost light source for optical communication systems.
Original languageEnglish (US)
Pages (from-to)7022-7033
Number of pages12
JournalOptics Express
Issue number6
StatePublished - Mar 19 2018
Externally publishedYes

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics


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