Domain Wall Propagation and Pinning Induced by Current Pulses in Cylindrical Modulated Nanowires

Cristina Bran, Jose Angel Fernandez Fernandez-Roldan, Julian Moreno, Arantxa Fraile Rodriguez, Rafael Perez del Real, Agustina Asenjo, Elias Saugar, Jorge Marqués-Marchán, Hanan Mohammed, Michael Foerster, Lucia Aballe, Jürgen Kosel, Manuel Vazquez, Oksana Chubykalo-Fesenko

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

The future developments of 3D magnetic nanotechnology require the control of domain wall dynamics by means of current pulses. While this has been extensively studied in 2D magnetic strips (planar nanowires), few reports exist in cylindrical geometry, where Bloch Point domain walls are expected to have intriguing properties. Here we report this investigation in cylindrical magnetic Ni nanowires with geometrical notches. Experimental work based on synchrotron X-ray magnetic circular dichroism (XMCD) combined with photoemission electron microscopy (PEEM) indicates that large current densities induce domain wall nucleation while smaller currents move domain walls preferably antiparallel to the current direction. In the region where no pinning centers are present we found domain wall velocity of about 1 km/s. Thermal modelling indicates that large current densities temporarily raise the temperature in the nanowire above the Curie temperature leading to nucleation of domain walls during the system cooling. Micromagnetic modelling with spin-torque effect shows that for intermediate current densities Bloch Point domain walls with chirality parallel to the Oersted field propagate antiparallel to the current direction. In other cases, domain walls can be bounced from the notches and/or get pinned outside their positions. We thus find that current is not only responsible for the domain wall propagation but is also a source of pinning due to the Oersted field action.
Original languageEnglish (US)
JournalNanoscale
DOIs
StatePublished - Apr 10 2023

ASJC Scopus subject areas

  • General Materials Science

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