TY - JOUR
T1 - Doped silicene: Evidence of a wide stability range
AU - Cheng, Yingchun
AU - Zhu, Zhiyong
AU - Schwingenschlögl, Udo
N1 - KAUST Repository Item: Exported on 2020-10-01
PY - 2011/6/17
Y1 - 2011/6/17
N2 - The effects of doping on the lattice structure, electronic structure, phonon spectrum, and electron-phonon coupling of low-buckling silicene are studied by first-principles calculations. Although the lattice is found to be very sensitive to the carrier concentration, it is stable in a wide doping range. The frequencies of the E2g-Γ and A′-K Raman modes can be used to probe the carrier concentration. In addition, the phonon dispersion displays Kohn anomalies at the Γ and K points which are reduced by doping. This implies that the electron-phonon coupling cannot be neglected in field-effect transistor applications. Copyright © 2011 EPLA.
AB - The effects of doping on the lattice structure, electronic structure, phonon spectrum, and electron-phonon coupling of low-buckling silicene are studied by first-principles calculations. Although the lattice is found to be very sensitive to the carrier concentration, it is stable in a wide doping range. The frequencies of the E2g-Γ and A′-K Raman modes can be used to probe the carrier concentration. In addition, the phonon dispersion displays Kohn anomalies at the Γ and K points which are reduced by doping. This implies that the electron-phonon coupling cannot be neglected in field-effect transistor applications. Copyright © 2011 EPLA.
UR - http://hdl.handle.net/10754/561801
UR - https://iopscience.iop.org/article/10.1209/0295-5075/95/17005
UR - http://www.scopus.com/inward/record.url?scp=79960170136&partnerID=8YFLogxK
U2 - 10.1209/0295-5075/95/17005
DO - 10.1209/0295-5075/95/17005
M3 - Article
SN - 0295-5075
VL - 95
SP - 17005
JO - EPL (Europhysics Letters)
JF - EPL (Europhysics Letters)
IS - 1
ER -