Abstract
Highly-conductive n- and p-type ZnSe layers have been successfully grown by MBE with Cl doping and nitrogen radical doping techniques, respectively. Carrier scattering mechanism and compensation in MBE-grown ZnSe layers have been studied by optical and electrical measurements. It was found that electron scattering at 77 K was dominated by neutral impurity scattering. The self-compensation effect has not been observed for both n- and p-type ZnSe layers.
| Original language | English (US) |
|---|---|
| Pages | 330-332 |
| Number of pages | 3 |
| State | Published - 1992 |
| Externally published | Yes |
| Event | Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn Duration: Aug 26 1992 → Aug 28 1992 |
Other
| Other | Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 |
|---|---|
| City | Tsukuba, Jpn |
| Period | 08/26/92 → 08/28/92 |
ASJC Scopus subject areas
- General Engineering