Doping monolayer graphene with single atom substitutions

Hongtao Wang; Qingxiao Wang; Yingchun Cheng; Kun Li; Yingbang Yao; Qiang Zhang; Cezhou Dong; Pengfei Wang; Udo Schwingenschlögl; Wei Yang; Xixiang Zhang

doi:10.1021/nl2031629

Doping monolayer graphene with single atom substitutions

Hongtao Wang, Qingxiao Wang, Yingchun Cheng, Kun Li, Yingbang Yao, Qiang Zhang, Cezhou Dong, Pengfei Wang, Udo Schwingenschlögl, Wei Yang, Xixiang Zhang

Research output: Contribution to journal › Article › peer-review

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Abstract

Functionalized graphene has been extensively studied with the aim of tailoring properties for gas sensors, superconductors, supercapacitors, nanoelectronics, and spintronics. A bottleneck is the capability to control the carrier type and density by doping. We demonstrate that a two-step process is an efficient way to dope graphene: create vacancies by high-energy atom/ion bombardment and fill these vacancies with desired dopants. Different elements (Pt, Co, and In) have been successfully doped in the single-atom form. The high binding energy of the metal-vacancy complex ensures its stability and is consistent with in situ observation by an aberration-corrected and monochromated transmission electron microscope. © 2011 American Chemical Society.

Original language	English (US)
Pages (from-to)	141-144
Number of pages	4
Journal	Nano Letters
Volume	12
Issue number	1
DOIs	https://doi.org/10.1021/nl2031629
State	Published - Dec 7 2011

ASJC Scopus subject areas

Bioengineering
General Materials Science
General Chemistry
Mechanical Engineering
Condensed Matter Physics

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10.1021/nl2031629

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title = "Doping monolayer graphene with single atom substitutions",

abstract = "Functionalized graphene has been extensively studied with the aim of tailoring properties for gas sensors, superconductors, supercapacitors, nanoelectronics, and spintronics. A bottleneck is the capability to control the carrier type and density by doping. We demonstrate that a two-step process is an efficient way to dope graphene: create vacancies by high-energy atom/ion bombardment and fill these vacancies with desired dopants. Different elements (Pt, Co, and In) have been successfully doped in the single-atom form. The high binding energy of the metal-vacancy complex ensures its stability and is consistent with in situ observation by an aberration-corrected and monochromated transmission electron microscope. {\textcopyright} 2011 American Chemical Society.",

author = "Hongtao Wang and Qingxiao Wang and Yingchun Cheng and Kun Li and Yingbang Yao and Qiang Zhang and Cezhou Dong and Pengfei Wang and Udo Schwingenschl{\"o}gl and Wei Yang and Xixiang Zhang",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: H.T.W. and W.Y. acknowledge the financial support from the National Science Foundation of China (Grant 10832009; Grant 11090333) and Science Foundation of Chinese University (Grant 2011QNA4038).",

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doi = "10.1021/nl2031629",

language = "English (US)",

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journal = "Nano Letters",

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TY - JOUR

T1 - Doping monolayer graphene with single atom substitutions

AU - Wang, Hongtao

AU - Wang, Qingxiao

AU - Cheng, Yingchun

AU - Li, Kun

AU - Yao, Yingbang

AU - Zhang, Qiang

AU - Dong, Cezhou

AU - Wang, Pengfei

AU - Schwingenschlögl, Udo

AU - Yang, Wei

AU - Zhang, Xixiang

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: H.T.W. and W.Y. acknowledge the financial support from the National Science Foundation of China (Grant 10832009; Grant 11090333) and Science Foundation of Chinese University (Grant 2011QNA4038).

PY - 2011/12/7

Y1 - 2011/12/7

N2 - Functionalized graphene has been extensively studied with the aim of tailoring properties for gas sensors, superconductors, supercapacitors, nanoelectronics, and spintronics. A bottleneck is the capability to control the carrier type and density by doping. We demonstrate that a two-step process is an efficient way to dope graphene: create vacancies by high-energy atom/ion bombardment and fill these vacancies with desired dopants. Different elements (Pt, Co, and In) have been successfully doped in the single-atom form. The high binding energy of the metal-vacancy complex ensures its stability and is consistent with in situ observation by an aberration-corrected and monochromated transmission electron microscope. © 2011 American Chemical Society.

AB - Functionalized graphene has been extensively studied with the aim of tailoring properties for gas sensors, superconductors, supercapacitors, nanoelectronics, and spintronics. A bottleneck is the capability to control the carrier type and density by doping. We demonstrate that a two-step process is an efficient way to dope graphene: create vacancies by high-energy atom/ion bombardment and fill these vacancies with desired dopants. Different elements (Pt, Co, and In) have been successfully doped in the single-atom form. The high binding energy of the metal-vacancy complex ensures its stability and is consistent with in situ observation by an aberration-corrected and monochromated transmission electron microscope. © 2011 American Chemical Society.

UR - http://hdl.handle.net/10754/562057

UR - https://pubs.acs.org/doi/10.1021/nl2031629

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U2 - 10.1021/nl2031629

DO - 10.1021/nl2031629

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C2 - 22136503

SN - 1530-6984

VL - 12

SP - 141

EP - 144

JO - Nano Letters

JF - Nano Letters

IS - 1

ER -

Doping monolayer graphene with single atom substitutions

Abstract

ASJC Scopus subject areas

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