Drain bias stress and memory effects in AlGaN/GaN heterostructure field-effect transistors with p-GaN gate

Takayuki Sugiyama; Yoshio Honda; Masahito Yamaguchi; Hiroshi Amano; Yoshinori Oshimura; Daisuke Iida; Motoaki Iwaya; Isamu Akasaki

doi:10.1002/pssc.201001081

Drain bias stress and memory effects in AlGaN/GaN heterostructure field-effect transistors with p-GaN gate

Takayuki Sugiyama, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano, Yoshinori Oshimura, Daisuke Iida, Motoaki Iwaya, Isamu Akasaki

Research output: Contribution to journal › Article › peer-review

Abstract

We measured the drain bias stress effects in normally off mode AlGaN/GaN (JHFETs) with a p-GaN gate, whose AlGaN barrier was exposed to air by dry etching. A large current collapse and a memory effect decreased the drain current (IDS). IDS of an unpassivated sample became the off leakage level of normally off mode JHFETs at a drain stress bias of 15 V. On the other hand, IDS in SiN-passivated JHFETs decreased at a slow rate upon applying drain stress bias. The decrease in IDS in SiN-passivated JHFETs was almost the same as that in as-grown HFETs. These drain stress and memory effects were perfectly deletable by light exposure, and were rewritable similarly in an EPROM. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Original language	English (US)
Pages (from-to)	2424-2426
Number of pages	3
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	8
Issue number	7-8
DOIs	https://doi.org/10.1002/pssc.201001081
State	Published - Jul 1 2011
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics

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@article{ab5017fb1e5c41bcb49cfc596a3f1fec,

title = "Drain bias stress and memory effects in AlGaN/GaN heterostructure field-effect transistors with p-GaN gate",

abstract = "We measured the drain bias stress effects in normally off mode AlGaN/GaN (JHFETs) with a p-GaN gate, whose AlGaN barrier was exposed to air by dry etching. A large current collapse and a memory effect decreased the drain current (IDS). IDS of an unpassivated sample became the off leakage level of normally off mode JHFETs at a drain stress bias of 15 V. On the other hand, IDS in SiN-passivated JHFETs decreased at a slow rate upon applying drain stress bias. The decrease in IDS in SiN-passivated JHFETs was almost the same as that in as-grown HFETs. These drain stress and memory effects were perfectly deletable by light exposure, and were rewritable similarly in an EPROM. {\textcopyright} 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",

author = "Takayuki Sugiyama and Yoshio Honda and Masahito Yamaguchi and Hiroshi Amano and Yoshinori Oshimura and Daisuke Iida and Motoaki Iwaya and Isamu Akasaki",

note = "Generated from Scopus record by KAUST IRTS on 2023-09-21",

year = "2011",

month = jul,

day = "1",

doi = "10.1002/pssc.201001081",

language = "English (US)",

volume = "8",

pages = "2424--2426",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley",

number = "7-8",

}

TY - JOUR

T1 - Drain bias stress and memory effects in AlGaN/GaN heterostructure field-effect transistors with p-GaN gate

AU - Sugiyama, Takayuki

AU - Honda, Yoshio

AU - Yamaguchi, Masahito

AU - Amano, Hiroshi

AU - Oshimura, Yoshinori

AU - Iida, Daisuke

AU - Iwaya, Motoaki

AU - Akasaki, Isamu

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-21

PY - 2011/7/1

Y1 - 2011/7/1

N2 - We measured the drain bias stress effects in normally off mode AlGaN/GaN (JHFETs) with a p-GaN gate, whose AlGaN barrier was exposed to air by dry etching. A large current collapse and a memory effect decreased the drain current (IDS). IDS of an unpassivated sample became the off leakage level of normally off mode JHFETs at a drain stress bias of 15 V. On the other hand, IDS in SiN-passivated JHFETs decreased at a slow rate upon applying drain stress bias. The decrease in IDS in SiN-passivated JHFETs was almost the same as that in as-grown HFETs. These drain stress and memory effects were perfectly deletable by light exposure, and were rewritable similarly in an EPROM. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

AB - We measured the drain bias stress effects in normally off mode AlGaN/GaN (JHFETs) with a p-GaN gate, whose AlGaN barrier was exposed to air by dry etching. A large current collapse and a memory effect decreased the drain current (IDS). IDS of an unpassivated sample became the off leakage level of normally off mode JHFETs at a drain stress bias of 15 V. On the other hand, IDS in SiN-passivated JHFETs decreased at a slow rate upon applying drain stress bias. The decrease in IDS in SiN-passivated JHFETs was almost the same as that in as-grown HFETs. These drain stress and memory effects were perfectly deletable by light exposure, and were rewritable similarly in an EPROM. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

UR - https://onlinelibrary.wiley.com/doi/10.1002/pssc.201001081

UR - http://www.scopus.com/inward/record.url?scp=79960714137&partnerID=8YFLogxK

U2 - 10.1002/pssc.201001081

DO - 10.1002/pssc.201001081

M3 - Article

SN - 1862-6351

VL - 8

SP - 2424

EP - 2426

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 7-8

ER -

Drain bias stress and memory effects in AlGaN/GaN heterostructure field-effect transistors with p-GaN gate

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