TY - GEN
T1 - Dry lithography of chemically-amplified acid-catalyzed deep-UV and E-beam resist
AU - Shacham-Diamand, Yosef Y.
AU - Lee, C.
AU - Frechet, Jean M.
AU - Lee, S. M.
PY - 1993
Y1 - 1993
N2 - The process, chemistry, and characterization of the silylation and dry-development of acid catalyzed resist is described. The resist is sensitive to deep-UV, x ray, and e-beam exposure and its sensitivity can be tailored by the relative concentration of its components. The resist is positive or negative for dry or wet development, respectively. Two silylation agents were studied: Hexamethyldisilazane (HMDS) and N,N-Dimethylaminotrimethylsilane (DMATMS). The silylation was characterized by Fourier-transform-infrared (FTIR) transmission spectroscopy and Rutherford-backscattering spectrometry (RBS). FTIR revealed the total number of OH and SiO bonds, while RBS revealed the composition profile in various regions of the resist. The silylation by HMDS was not well controlled and was characterized by a large incubation period followed by fast penetration. The DMATMS silylation process, however, was well controlled and reproducible. The penetration of the silicon atoms monotonically increased with time until it reached saturation. Films patterned by deep-UV (254 nm) exposure were silylated with DMATMS and were etched by an oxygen plasma in a magnetron ion etcher (MIE). The etch rate of the oxygen plasma was characterized for the unexposed, silylated regions, as well as for the exposed, unsilylated regions. The optimized dry-development process is described and SEM cross sections of lines as narrow as 0.4 μm wide are presented.
AB - The process, chemistry, and characterization of the silylation and dry-development of acid catalyzed resist is described. The resist is sensitive to deep-UV, x ray, and e-beam exposure and its sensitivity can be tailored by the relative concentration of its components. The resist is positive or negative for dry or wet development, respectively. Two silylation agents were studied: Hexamethyldisilazane (HMDS) and N,N-Dimethylaminotrimethylsilane (DMATMS). The silylation was characterized by Fourier-transform-infrared (FTIR) transmission spectroscopy and Rutherford-backscattering spectrometry (RBS). FTIR revealed the total number of OH and SiO bonds, while RBS revealed the composition profile in various regions of the resist. The silylation by HMDS was not well controlled and was characterized by a large incubation period followed by fast penetration. The DMATMS silylation process, however, was well controlled and reproducible. The penetration of the silicon atoms monotonically increased with time until it reached saturation. Films patterned by deep-UV (254 nm) exposure were silylated with DMATMS and were etched by an oxygen plasma in a magnetron ion etcher (MIE). The etch rate of the oxygen plasma was characterized for the unexposed, silylated regions, as well as for the exposed, unsilylated regions. The optimized dry-development process is described and SEM cross sections of lines as narrow as 0.4 μm wide are presented.
UR - http://www.scopus.com/inward/record.url?scp=0027865142&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0027865142
SN - 081941218X
T3 - Proceedings of SPIE - The International Society for Optical Engineering
SP - 242
EP - 250
BT - Proceedings of SPIE - The International Society for Optical Engineering
A2 - Shladov, Itzhak
A2 - Weissman, Yitzhak
A2 - Oron, Moshe
PB - Publ by Society of Photo-Optical Instrumentation Engineers
T2 - 8th Meeting on Optical Engineering on Israel: Optoelectronics and Applications in Industry and Medicine
Y2 - 14 December 1992 through 16 December 1992
ER -