Dual-sided photoelectrodes

Boon S. Ooi (Inventor), Mohamed Ebaid Abdrabou Hussein (Inventor), Aditya Prabaswara (Inventor), Tien Khee Ng (Inventor), Jungwook Min (Inventor)

Research output: Patent

Abstract

Embodiments describe a photoelectrode including a first III-nitride nanowire layer, a transparent substrate in contact with the first nanowire layer at a first substrate surface and a second III-nitride nanowire layer in contact with the substrate at a second substrate surface, substantially opposite the first substrate surface.
Original languageEnglish (US)
Patent numberWO2018047082A1
StatePublished - Mar 15 2018

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