Abstract
We present a dynamic analysis of a novel RF MEMS switch utilizing the dynamic pull-in phenomenon. We study this phenomenon and present guidelines about its mechanism. We propose to utilize this phenomenon to design a novel RF MEMS switch, which can be actuated by a voltage load as low as 40% of the traditionally used static pull-in voltage. The switch is actuated using a combined DC and AC loading. The AC loading can be tuned by altering its amplitude and/or frequency to reach the pull-in instability with the lowest driving voltage and fastest response speed. The new actuation method can solve a major problem in the design of RF MEMS switches, which is the high deriving voltage requirement.
Original language | English (US) |
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Title of host publication | 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004 |
Editors | M. Laudon, B. Romanowicz |
Pages | 287-290 |
Number of pages | 4 |
Volume | 2 |
State | Published - 2004 |
Externally published | Yes |
Event | 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004 - Boston, MA, United States Duration: Mar 7 2004 → Mar 11 2004 |
Other
Other | 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004 |
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Country/Territory | United States |
City | Boston, MA |
Period | 03/7/04 → 03/11/04 |
Keywords
- Dynamic pull-in
- Electric actuation
- Microbeams
- RF switches
ASJC Scopus subject areas
- Engineering(all)