Dynamic simulations of a novel RF MEMS switch

Mohammad I. Younis; Eihab M. Abdel-Rahman; Ali H. Nayfeh

Dynamic simulations of a novel RF MEMS switch

Mohammad I. Younis^*, Eihab M. Abdel-Rahman, Ali H. Nayfeh

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

15 Scopus citations

Abstract

We present a dynamic analysis of a novel RF MEMS switch utilizing the dynamic pull-in phenomenon. We study this phenomenon and present guidelines about its mechanism. We propose to utilize this phenomenon to design a novel RF MEMS switch, which can be actuated by a voltage load as low as 40% of the traditionally used static pull-in voltage. The switch is actuated using a combined DC and AC loading. The AC loading can be tuned by altering its amplitude and/or frequency to reach the pull-in instability with the lowest driving voltage and fastest response speed. The new actuation method can solve a major problem in the design of RF MEMS switches, which is the high deriving voltage requirement.

Original language	English (US)
Title of host publication	2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004
Editors	M. Laudon, B. Romanowicz
Pages	287-290
Number of pages	4
Volume	2
State	Published - 2004
Externally published	Yes
Event	2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004 - Boston, MA, United States Duration: Mar 7 2004 → Mar 11 2004

Other

Other	2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004
Country/Territory	United States
City	Boston, MA
Period	03/7/04 → 03/11/04

Keywords

Dynamic pull-in
Electric actuation
Microbeams
RF switches

ASJC Scopus subject areas

Engineering(all)

Cite this

@inproceedings{f0e3848fcd3a450bbb10d92f6342f375,

title = "Dynamic simulations of a novel RF MEMS switch",

abstract = "We present a dynamic analysis of a novel RF MEMS switch utilizing the dynamic pull-in phenomenon. We study this phenomenon and present guidelines about its mechanism. We propose to utilize this phenomenon to design a novel RF MEMS switch, which can be actuated by a voltage load as low as 40% of the traditionally used static pull-in voltage. The switch is actuated using a combined DC and AC loading. The AC loading can be tuned by altering its amplitude and/or frequency to reach the pull-in instability with the lowest driving voltage and fastest response speed. The new actuation method can solve a major problem in the design of RF MEMS switches, which is the high deriving voltage requirement.",

keywords = "Dynamic pull-in, Electric actuation, Microbeams, RF switches",

author = "Younis, {Mohammad I.} and Abdel-Rahman, {Eihab M.} and Nayfeh, {Ali H.}",

year = "2004",

language = "English (US)",

isbn = "0972842276",

volume = "2",

pages = "287--290",

editor = "M. Laudon and B. Romanowicz",

booktitle = "2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004",

note = "2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004 ; Conference date: 07-03-2004 Through 11-03-2004",

}

TY - GEN

T1 - Dynamic simulations of a novel RF MEMS switch

AU - Younis, Mohammad I.

AU - Abdel-Rahman, Eihab M.

AU - Nayfeh, Ali H.

PY - 2004

Y1 - 2004

N2 - We present a dynamic analysis of a novel RF MEMS switch utilizing the dynamic pull-in phenomenon. We study this phenomenon and present guidelines about its mechanism. We propose to utilize this phenomenon to design a novel RF MEMS switch, which can be actuated by a voltage load as low as 40% of the traditionally used static pull-in voltage. The switch is actuated using a combined DC and AC loading. The AC loading can be tuned by altering its amplitude and/or frequency to reach the pull-in instability with the lowest driving voltage and fastest response speed. The new actuation method can solve a major problem in the design of RF MEMS switches, which is the high deriving voltage requirement.

AB - We present a dynamic analysis of a novel RF MEMS switch utilizing the dynamic pull-in phenomenon. We study this phenomenon and present guidelines about its mechanism. We propose to utilize this phenomenon to design a novel RF MEMS switch, which can be actuated by a voltage load as low as 40% of the traditionally used static pull-in voltage. The switch is actuated using a combined DC and AC loading. The AC loading can be tuned by altering its amplitude and/or frequency to reach the pull-in instability with the lowest driving voltage and fastest response speed. The new actuation method can solve a major problem in the design of RF MEMS switches, which is the high deriving voltage requirement.

KW - Dynamic pull-in

KW - Electric actuation

KW - Microbeams

KW - RF switches

UR - http://www.scopus.com/inward/record.url?scp=6344237246&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:6344237246

SN - 0972842276

VL - 2

SP - 287

EP - 290

BT - 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004

A2 - Laudon, M.

A2 - Romanowicz, B.

T2 - 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004

Y2 - 7 March 2004 through 11 March 2004

ER -

Dynamic simulations of a novel RF MEMS switch

Abstract

Other

Keywords

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this