E-beam process control for the fabrication of T-shaped gates for GaAs MESFETs with dimensions down to 80 nm

L. Luciani; M. Gentili; E. Di Fabrizio; B. Gabbrielli

doi:10.1016/0167-9317(92)90108-4

E-beam process control for the fabrication of T-shaped gates for GaAs MESFETs with dimensions down to 80 nm

L. Luciani^*, M. Gentili, E. Di Fabrizio, B. Gabbrielli

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

In this paper Electron Beam Lithography is used for fabrication of T-shape gates for GaAs MESFETs with foot dimension down to 80 nm. A double resist layer composed by PMMA and its copolimer was characterized by means of dosage latitude experiments. The investigated variables include the accelerating voltage (20 kV and 40 kV), the resist thickness and the developer concentration. Furthermore, use of Monte Carlo scattering simulation and resist profile modelling also allowed clarification of the experimentally observed process behaviour.

Original language	English (US)
Pages (from-to)	527-530
Number of pages	4
Journal	Microelectronic Engineering
Volume	17
Issue number	1-4
DOIs	https://doi.org/10.1016/0167-9317(92)90108-4
State	Published - Mar 1992
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/0167-9317(92)90108-4

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title = "E-beam process control for the fabrication of T-shaped gates for GaAs MESFETs with dimensions down to 80 nm",

abstract = "In this paper Electron Beam Lithography is used for fabrication of T-shape gates for GaAs MESFETs with foot dimension down to 80 nm. A double resist layer composed by PMMA and its copolimer was characterized by means of dosage latitude experiments. The investigated variables include the accelerating voltage (20 kV and 40 kV), the resist thickness and the developer concentration. Furthermore, use of Monte Carlo scattering simulation and resist profile modelling also allowed clarification of the experimentally observed process behaviour.",

author = "L. Luciani and M. Gentili and {Di Fabrizio}, E. and B. Gabbrielli",

year = "1992",

month = mar,

doi = "10.1016/0167-9317(92)90108-4",

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journal = "Microelectronic Engineering",

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T1 - E-beam process control for the fabrication of T-shaped gates for GaAs MESFETs with dimensions down to 80 nm

AU - Luciani, L.

AU - Gentili, M.

AU - Di Fabrizio, E.

AU - Gabbrielli, B.

PY - 1992/3

Y1 - 1992/3

N2 - In this paper Electron Beam Lithography is used for fabrication of T-shape gates for GaAs MESFETs with foot dimension down to 80 nm. A double resist layer composed by PMMA and its copolimer was characterized by means of dosage latitude experiments. The investigated variables include the accelerating voltage (20 kV and 40 kV), the resist thickness and the developer concentration. Furthermore, use of Monte Carlo scattering simulation and resist profile modelling also allowed clarification of the experimentally observed process behaviour.

AB - In this paper Electron Beam Lithography is used for fabrication of T-shape gates for GaAs MESFETs with foot dimension down to 80 nm. A double resist layer composed by PMMA and its copolimer was characterized by means of dosage latitude experiments. The investigated variables include the accelerating voltage (20 kV and 40 kV), the resist thickness and the developer concentration. Furthermore, use of Monte Carlo scattering simulation and resist profile modelling also allowed clarification of the experimentally observed process behaviour.

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DO - 10.1016/0167-9317(92)90108-4

M3 - Article

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JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1-4

ER -

E-beam process control for the fabrication of T-shaped gates for GaAs MESFETs with dimensions down to 80 nm

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