Edge structures and properties of triangular antidots in single-layer MoS2

Li Yong Gan, Yingchun Cheng, Udo Schwingenschlögl, Yingbang Yao, Yong Zhao, Xixiang Zhang, Wei Huang

Research output: Contribution to journalArticlepeer-review

15 Scopus citations


Density functional theory and experiments are employed to shed light on the edge structures of antidots in O etched single-layer MoS2. The equilibrium morphology is found to be the zigzag Mo edge with each Mo atom bonded to two O atoms, in a wide range of O chemical potentials. Scanning electron microscopy shows that the orientation of the created triangular antidots is opposite to the triangular shape of the single-layer MoS2 samples, in agreement with the theoretical predictions. Furthermore, edges induced by O etching turn out to be p-doped, suggesting an effective strategy to realize p-type MoS2 devices. Published by AIP Publishing.
Original languageEnglish (US)
Pages (from-to)091603
JournalApplied Physics Letters
Issue number9
StatePublished - Aug 30 2016


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