Effect of an external electric field on the charge transport parameters in organic molecular semiconductors

J. C. Sancho-García; G. Horowitz; J. L. Brédas; J. Cornil

doi:10.1063/1.1625918

Effect of an external electric field on the charge transport parameters in organic molecular semiconductors

J. C. Sancho-García^*, G. Horowitz, J. L. Brédas, J. Cornil

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

54 Scopus citations

Abstract

The influence of the electric field generated by the gate of a transistor on the hole transport properties of semiconducting organic layers was studied by means of semiempirical calculations. It was found that the charge distribution and geometric structure are left nearly unchanged for electric fields up to 10⁷ V/cm.

Original language	English (US)
Pages (from-to)	12563-12568
Number of pages	6
Journal	JOURNAL OF CHEMICAL PHYSICS
Volume	119
Issue number	23
DOIs	https://doi.org/10.1063/1.1625918
State	Published - Dec 15 2003
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy
Physical and Theoretical Chemistry

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title = "Effect of an external electric field on the charge transport parameters in organic molecular semiconductors",

abstract = "The influence of the electric field generated by the gate of a transistor on the hole transport properties of semiconducting organic layers was studied by means of semiempirical calculations. It was found that the charge distribution and geometric structure are left nearly unchanged for electric fields up to 107 V/cm.",

author = "Sancho-Garc{\'i}a, {J. C.} and G. Horowitz and Br{\'e}das, {J. L.} and J. Cornil",

year = "2003",

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doi = "10.1063/1.1625918",

language = "English (US)",

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T1 - Effect of an external electric field on the charge transport parameters in organic molecular semiconductors

AU - Sancho-García, J. C.

AU - Horowitz, G.

AU - Brédas, J. L.

AU - Cornil, J.

PY - 2003/12/15

Y1 - 2003/12/15

N2 - The influence of the electric field generated by the gate of a transistor on the hole transport properties of semiconducting organic layers was studied by means of semiempirical calculations. It was found that the charge distribution and geometric structure are left nearly unchanged for electric fields up to 107 V/cm.

AB - The influence of the electric field generated by the gate of a transistor on the hole transport properties of semiconducting organic layers was studied by means of semiempirical calculations. It was found that the charge distribution and geometric structure are left nearly unchanged for electric fields up to 107 V/cm.

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U2 - 10.1063/1.1625918

DO - 10.1063/1.1625918

M3 - Article

AN - SCOPUS:0346688930

SN - 0021-9606

VL - 119

SP - 12563

EP - 12568

JO - JOURNAL OF CHEMICAL PHYSICS

JF - JOURNAL OF CHEMICAL PHYSICS

IS - 23

ER -

Effect of an external electric field on the charge transport parameters in organic molecular semiconductors

Abstract

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