Effect of annealing InGaP/InAlGaP laser structure at 950°C on laser characteristics

Ahmad Al-Jabr, Pawan Mishra, Mohammed Abdul Majid, Tien Khee Ng, Boon S. Ooi

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


We achieved considerable laser diode (LD) improvement after annealing InGaP/InAlGaP laser structure at 950°C for a total annealing time of 2 min. The photoluminescence intensity is increased by 10 folds and full-wave at half-maximum is reduced from ∼30 to 20 nm. The measured LDs exhibited significantly reduced threshold current (Ith), from 2 to 1.5 A for a 1-mm long LD, improved internal efficiency (ηi), from 63% to 68%, and increased internal losses αi, from 14.3 to 18.6 cm−1. Our work suggests that the use of strain-induced quantum well intermixing is a viable solution for high-efficiency AlGaInP devices at shorter wavelengths. The advent of laser-based solid-state lighting (SSL) and visible-light communications (VLC) highlighted the importance of the current findings, which are aimed at improving color quality and photodetector received power in SSL and VLC, respectively, via annealed red LDs.
Original languageEnglish (US)
Pages (from-to)036004
JournalJournal of Nanophotonics
Issue number3
StatePublished - Jul 28 2016


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