TY - GEN
T1 - Effect of carrier relaxation lifetime on the performance of InAs/InP quantum-dash lasers
AU - Khan, Mohammed Zahed Mustafa
AU - Ng, Tien Khee
AU - Ooi, Boon S.
N1 - KAUST Repository Item: Exported on 2020-10-01
PY - 2011/12
Y1 - 2011/12
N2 - The effect of carrier relaxation process into the quantum dash (Qdash) ground state (GS) is examined theoretically by carrier-photon rate equation model incorporating the inhomogeneous broadening. Increase in the relaxation time and the inhomogeneous broadening degrades the threshold current density. Moreover, our results show that a relaxation time of less than 2 ps gives optimum laser performance. © 2011 IEEE.
AB - The effect of carrier relaxation process into the quantum dash (Qdash) ground state (GS) is examined theoretically by carrier-photon rate equation model incorporating the inhomogeneous broadening. Increase in the relaxation time and the inhomogeneous broadening degrades the threshold current density. Moreover, our results show that a relaxation time of less than 2 ps gives optimum laser performance. © 2011 IEEE.
UR - http://hdl.handle.net/10754/564478
UR - http://ieeexplore.ieee.org/document/6149813/
UR - http://www.scopus.com/inward/record.url?scp=84863400712&partnerID=8YFLogxK
U2 - 10.1109/HONET.2011.6149813
DO - 10.1109/HONET.2011.6149813
M3 - Conference contribution
SN - 9781457711695
SP - 182
EP - 184
BT - 8th International Conference on High-capacity Optical Networks and Emerging Technologies
PB - Institute of Electrical and Electronics Engineers (IEEE)
ER -