Effect of current injection efficiency on efficiency-droop in InGaN quantum well light-emitting diodes

Hongping Zhao; Guangyu Liu; Ronald A. Arif; Nelson Tansu

doi:10.1109/ISDRS.2009.5378014

Effect of current injection efficiency on efficiency-droop in InGaN quantum well light-emitting diodes

Hongping Zhao^*, Guangyu Liu, Ronald A. Arif, Nelson Tansu

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Original language	English (US)
Title of host publication	2009 International Semiconductor Device Research Symposium, ISDRS '09
DOIs	https://doi.org/10.1109/ISDRS.2009.5378014
State	Published - 2009
Externally published	Yes
Event	2009 International Semiconductor Device Research Symposium, ISDRS '09 - College Park, MD, United States Duration: Dec 9 2009 → Dec 11 2009

Publication series

Name	2009 International Semiconductor Device Research Symposium, ISDRS '09

Other

Other	2009 International Semiconductor Device Research Symposium, ISDRS '09
Country/Territory	United States
City	College Park, MD
Period	12/9/09 → 12/11/09

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ISDRS.2009.5378014

Cite this

@inproceedings{143f5af3f4214d9ba6b29d6e45c7ddda,

title = "Effect of current injection efficiency on efficiency-droop in InGaN quantum well light-emitting diodes",

author = "Hongping Zhao and Guangyu Liu and Arif, {Ronald A.} and Nelson Tansu",

year = "2009",

doi = "10.1109/ISDRS.2009.5378014",

language = "English (US)",

isbn = "9781424460304",

series = "2009 International Semiconductor Device Research Symposium, ISDRS '09",

booktitle = "2009 International Semiconductor Device Research Symposium, ISDRS '09",

note = "2009 International Semiconductor Device Research Symposium, ISDRS '09 ; Conference date: 09-12-2009 Through 11-12-2009",

}

Zhao, H, Liu, G, Arif, RA & Tansu, N 2009, Effect of current injection efficiency on efficiency-droop in InGaN quantum well light-emitting diodes. in 2009 International Semiconductor Device Research Symposium, ISDRS '09., 5378014, 2009 International Semiconductor Device Research Symposium, ISDRS '09, 2009 International Semiconductor Device Research Symposium, ISDRS '09, College Park, MD, United States, 12/9/09. https://doi.org/10.1109/ISDRS.2009.5378014

Effect of current injection efficiency on efficiency-droop in InGaN quantum well light-emitting diodes. / Zhao, Hongping; Liu, Guangyu; Arif, Ronald A. et al.
2009 International Semiconductor Device Research Symposium, ISDRS '09. 2009. 5378014 (2009 International Semiconductor Device Research Symposium, ISDRS '09).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Effect of current injection efficiency on efficiency-droop in InGaN quantum well light-emitting diodes

AU - Zhao, Hongping

AU - Liu, Guangyu

AU - Arif, Ronald A.

AU - Tansu, Nelson

PY - 2009

Y1 - 2009

UR - http://www.scopus.com/inward/record.url?scp=77949379023&partnerID=8YFLogxK

U2 - 10.1109/ISDRS.2009.5378014

DO - 10.1109/ISDRS.2009.5378014

M3 - Conference contribution

AN - SCOPUS:77949379023

SN - 9781424460304

T3 - 2009 International Semiconductor Device Research Symposium, ISDRS '09

BT - 2009 International Semiconductor Device Research Symposium, ISDRS '09

T2 - 2009 International Semiconductor Device Research Symposium, ISDRS '09

Y2 - 9 December 2009 through 11 December 2009

ER -

Effect of current injection efficiency on efficiency-droop in InGaN quantum well light-emitting diodes

Publication series

Other

ASJC Scopus subject areas

Access to Document

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Cite this