Effect of H2 Content on Reliability of Ultrathin In-Situ Steam Generated (ISSG) SiO2

T. Y. Luo; M. Laughery; Graham Brown; H. N. Al-Shareef; V. H.C. Watt; A. Karamcheti; M. D. Jackson; H. R. Huff

doi:10.1109/55.863100

Effect of H₂ Content on Reliability of Ultrathin In-Situ Steam Generated (ISSG) SiO₂

T. Y. Luo^*, M. Laughery, Graham Brown, H. N. Al-Shareef, V. H.C. Watt, A. Karamcheti, M. D. Jackson, H. R. Huff

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

This letter demonstrates the effect of H₂ percentage during oxidation on the quality of the in-situ steam generated (ISSG) oxide. Our results indicate the reliability of ISSG oxide is considerably improved as the H₂ percentage increases, from the viewpoint of stress-induced leakage current (SILC) and charge-to-breakdown (Q_BD).Such enhanced reliability of the ISSG oxide may be explained by the reduction of defects in the SiO₂ network within the structural transition layer, such as Si dangling bonds, weak Si-Si and strained Si-O bonds, by highly reactive oxygen atoms which are hypothesized to be dissociated from the molecular oxygen due to the presence of hydrogen.

Original language	English (US)
Pages (from-to)	430-432
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	21
Issue number	9
DOIs	https://doi.org/10.1109/55.863100
State	Published - Sep 2000
Externally published	Yes

Keywords

Charge-to-breakdown
SILC
Si dangling bonds
in-situ steam generated (ISSG) oxide
structural transition layer

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/55.863100

Cite this

@article{d5f3056d016e48c5a90d5348a33d15b3,

title = "Effect of H2 Content on Reliability of Ultrathin In-Situ Steam Generated (ISSG) SiO2",

abstract = "This letter demonstrates the effect of H2 percentage during oxidation on the quality of the in-situ steam generated (ISSG) oxide. Our results indicate the reliability of ISSG oxide is considerably improved as the H2 percentage increases, from the viewpoint of stress-induced leakage current (SILC) and charge-to-breakdown (QBD).Such enhanced reliability of the ISSG oxide may be explained by the reduction of defects in the SiO2 network within the structural transition layer, such as Si dangling bonds, weak Si-Si and strained Si-O bonds, by highly reactive oxygen atoms which are hypothesized to be dissociated from the molecular oxygen due to the presence of hydrogen.",

keywords = "Charge-to-breakdown, SILC, Si dangling bonds, in-situ steam generated (ISSG) oxide, structural transition layer",

author = "Luo, {T. Y.} and M. Laughery and Graham Brown and Al-Shareef, {H. N.} and Watt, {V. H.C.} and A. Karamcheti and Jackson, {M. D.} and Huff, {H. R.}",

year = "2000",

month = sep,

doi = "10.1109/55.863100",

language = "English (US)",

volume = "21",

pages = "430--432",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers",

number = "9",

}

TY - JOUR

T1 - Effect of H2 Content on Reliability of Ultrathin In-Situ Steam Generated (ISSG) SiO2

AU - Luo, T. Y.

AU - Laughery, M.

AU - Brown, Graham

AU - Al-Shareef, H. N.

AU - Watt, V. H.C.

AU - Karamcheti, A.

AU - Jackson, M. D.

AU - Huff, H. R.

PY - 2000/9

Y1 - 2000/9

N2 - This letter demonstrates the effect of H2 percentage during oxidation on the quality of the in-situ steam generated (ISSG) oxide. Our results indicate the reliability of ISSG oxide is considerably improved as the H2 percentage increases, from the viewpoint of stress-induced leakage current (SILC) and charge-to-breakdown (QBD).Such enhanced reliability of the ISSG oxide may be explained by the reduction of defects in the SiO2 network within the structural transition layer, such as Si dangling bonds, weak Si-Si and strained Si-O bonds, by highly reactive oxygen atoms which are hypothesized to be dissociated from the molecular oxygen due to the presence of hydrogen.

AB - This letter demonstrates the effect of H2 percentage during oxidation on the quality of the in-situ steam generated (ISSG) oxide. Our results indicate the reliability of ISSG oxide is considerably improved as the H2 percentage increases, from the viewpoint of stress-induced leakage current (SILC) and charge-to-breakdown (QBD).Such enhanced reliability of the ISSG oxide may be explained by the reduction of defects in the SiO2 network within the structural transition layer, such as Si dangling bonds, weak Si-Si and strained Si-O bonds, by highly reactive oxygen atoms which are hypothesized to be dissociated from the molecular oxygen due to the presence of hydrogen.

KW - Charge-to-breakdown

KW - SILC

KW - Si dangling bonds

KW - in-situ steam generated (ISSG) oxide

KW - structural transition layer

UR - http://www.scopus.com/inward/record.url?scp=85008025347&partnerID=8YFLogxK

U2 - 10.1109/55.863100

DO - 10.1109/55.863100

M3 - Article

AN - SCOPUS:85008025347

SN - 0741-3106

VL - 21

SP - 430

EP - 432

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 9

ER -