Effect of H2 Content on Reliability of Ultrathin In-Situ Steam Generated (ISSG) SiO2

T. Y. Luo*, M. Laughery, Graham Brown, H. N. Al-Shareef, V. H.C. Watt, A. Karamcheti, M. D. Jackson, H. R. Huff

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

22 Scopus citations


This letter demonstrates the effect of H2 percentage during oxidation on the quality of the in-situ steam generated (ISSG) oxide. Our results indicate the reliability of ISSG oxide is considerably improved as the H2 percentage increases, from the viewpoint of stress-induced leakage current (SILC) and charge-to-breakdown (QBD).Such enhanced reliability of the ISSG oxide may be explained by the reduction of defects in the SiO2 network within the structural transition layer, such as Si dangling bonds, weak Si-Si and strained Si-O bonds, by highly reactive oxygen atoms which are hypothesized to be dissociated from the molecular oxygen due to the presence of hydrogen.

Original languageEnglish (US)
Pages (from-to)430-432
Number of pages3
JournalIEEE Electron Device Letters
Issue number9
StatePublished - Sep 2000
Externally publishedYes


  • Charge-to-breakdown
  • SILC
  • Si dangling bonds
  • in-situ steam generated (ISSG) oxide
  • structural transition layer

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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