TY - GEN
T1 - Effect of in and N incorporation on the GaInNAs VCSELs
AU - Manaf, Nor Azlian Abdul
AU - Alias, Mohd Sharizal
AU - Mithani, Sufian Mousa
AU - Yahya, Mohamed Razman
AU - Mat, Abdul Fatah Awang
N1 - Funding Information:
The authors would like to thank the Research Foundation of São Paulo State—FAPESP—for financial support.
PY - 2009
Y1 - 2009
N2 - We study the effect of In and N content in GaInNAs material system for application of 1.3 μm vertical cavity surface emitting lasers (VCSEL). The emission wavelength are successfully observed at 1.303 μm wavelength. VCSEL sample with Ga0.58In0.42As QW give the highest output power (0.5694 mW) with threshold current 11mA. OCIS codes: (250.7260) Vertical cavity surface emitting lasers; (160.6000) Semiconductor materials
AB - We study the effect of In and N content in GaInNAs material system for application of 1.3 μm vertical cavity surface emitting lasers (VCSEL). The emission wavelength are successfully observed at 1.303 μm wavelength. VCSEL sample with Ga0.58In0.42As QW give the highest output power (0.5694 mW) with threshold current 11mA. OCIS codes: (250.7260) Vertical cavity surface emitting lasers; (160.6000) Semiconductor materials
UR - http://www.scopus.com/inward/record.url?scp=77949381492&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:77949381492
SN - 9781557528773
T3 - 2009 Asia Communications and Photonics Conference and Exhibition, ACP 2009
BT - 2009 Asia Communications and Photonics Conference and Exhibition, ACP 2009
T2 - 2009 Asia Communications and Photonics Conference and Exhibition, ACP 2009
Y2 - 2 November 2009 through 6 November 2009
ER -