Effect of precursor pulse time on charge trapping and mobility of ALD HfO2

Mohammad S. Akbar; Naim Moumen; Jeff Peterson; Joel Barnett; Muhammad Mustafa Hussain; Jack C. Lee

Effect of precursor pulse time on charge trapping and mobility of ALD HfO₂

Mohammad S. Akbar^*, Naim Moumen, Jeff Peterson, Joel Barnett, Muhammad Mustafa Hussain, Jack C. Lee

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

Abstract

In this work, the effect of ALD (atomic layer deposition) precursor HfCl₄ pulse time has been investigated systematically to characterize the electrical performance of HfO₂ devices. Improvement in bulk trapping and interface characteristics along with slight mobility improvement has been achieved as compared to devices with HfO₂ deposited with a standard pulse time of 150ms. Moreover, these devices did not show any apparent change in EOT or leakage current characteristics. Pulse time of 450ms has been considered to be the optimized process condition. Drastic increase in pulse time (1500ms) negated the benefit.

Original language	English (US)
Pages	161-168
Number of pages	8
State	Published - 2005
Externally published	Yes
Event	207th ECS Meeting - Quebec, Canada Duration: May 16 2005 → May 20 2005

Other

Other	207th ECS Meeting
Country/Territory	Canada
City	Quebec
Period	05/16/05 → 05/20/05

ASJC Scopus subject areas

General Engineering

Cite this

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title = "Effect of precursor pulse time on charge trapping and mobility of ALD HfO2",

abstract = "In this work, the effect of ALD (atomic layer deposition) precursor HfCl4 pulse time has been investigated systematically to characterize the electrical performance of HfO2 devices. Improvement in bulk trapping and interface characteristics along with slight mobility improvement has been achieved as compared to devices with HfO2 deposited with a standard pulse time of 150ms. Moreover, these devices did not show any apparent change in EOT or leakage current characteristics. Pulse time of 450ms has been considered to be the optimized process condition. Drastic increase in pulse time (1500ms) negated the benefit.",

author = "Akbar, {Mohammad S.} and Naim Moumen and Jeff Peterson and Joel Barnett and Hussain, {Muhammad Mustafa} and Lee, {Jack C.}",

year = "2005",

language = "English (US)",

pages = "161--168",

note = "207th ECS Meeting ; Conference date: 16-05-2005 Through 20-05-2005",

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TY - CONF

T1 - Effect of precursor pulse time on charge trapping and mobility of ALD HfO2

AU - Akbar, Mohammad S.

AU - Moumen, Naim

AU - Peterson, Jeff

AU - Barnett, Joel

AU - Hussain, Muhammad Mustafa

AU - Lee, Jack C.

PY - 2005

Y1 - 2005

N2 - In this work, the effect of ALD (atomic layer deposition) precursor HfCl4 pulse time has been investigated systematically to characterize the electrical performance of HfO2 devices. Improvement in bulk trapping and interface characteristics along with slight mobility improvement has been achieved as compared to devices with HfO2 deposited with a standard pulse time of 150ms. Moreover, these devices did not show any apparent change in EOT or leakage current characteristics. Pulse time of 450ms has been considered to be the optimized process condition. Drastic increase in pulse time (1500ms) negated the benefit.

AB - In this work, the effect of ALD (atomic layer deposition) precursor HfCl4 pulse time has been investigated systematically to characterize the electrical performance of HfO2 devices. Improvement in bulk trapping and interface characteristics along with slight mobility improvement has been achieved as compared to devices with HfO2 deposited with a standard pulse time of 150ms. Moreover, these devices did not show any apparent change in EOT or leakage current characteristics. Pulse time of 450ms has been considered to be the optimized process condition. Drastic increase in pulse time (1500ms) negated the benefit.

UR - http://www.scopus.com/inward/record.url?scp=31844432094&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:31844432094

SP - 161

EP - 168

T2 - 207th ECS Meeting

Y2 - 16 May 2005 through 20 May 2005

ER -

Effect of precursor pulse time on charge trapping and mobility of ALD HfO₂

Abstract

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ASJC Scopus subject areas

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