Effect of rapid thermal annealing on strain in ultrathin strained silicon on insulator layers

T. S. Drake; C. Ní Chléirigh; M. L. Lee; A. J. Pitera; E. A. Fitzgerald; D. A. Antoniadis; D. H. Anjum; J. Li; R. Hull; N. Klymko; J. L. Hoyt

doi:10.1063/1.1598649

Effect of rapid thermal annealing on strain in ultrathin strained silicon on insulator layers

T. S. Drake^*, C. Ní Chléirigh, M. L. Lee, A. J. Pitera, E. A. Fitzgerald, D. A. Antoniadis, D. H. Anjum, J. Li, R. Hull, N. Klymko, J. L. Hoyt

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

A study was performed on effect of rapid thermal annealing on strain in ultrathin strained silicon on insulator layers. The fabrication of these layers was performed by epitaxial growth of strained silicon on relaxed SiGe, wafer bonding and an etch-back technique. It was found that on using 325 nm Raman spectroscopy, no strain relaxation was observed.

Original language	English (US)
Pages (from-to)	875-877
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	5
DOIs	https://doi.org/10.1063/1.1598649
State	Published - Aug 4 2003
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1598649

Cite this

@article{263ad6cc0ae245f0bd3af8f3c0c9a4d7,

title = "Effect of rapid thermal annealing on strain in ultrathin strained silicon on insulator layers",

abstract = "A study was performed on effect of rapid thermal annealing on strain in ultrathin strained silicon on insulator layers. The fabrication of these layers was performed by epitaxial growth of strained silicon on relaxed SiGe, wafer bonding and an etch-back technique. It was found that on using 325 nm Raman spectroscopy, no strain relaxation was observed.",

author = "Drake, {T. S.} and {N{\'i} Chl{\'e}irigh}, C. and Lee, {M. L.} and Pitera, {A. J.} and Fitzgerald, {E. A.} and Antoniadis, {D. A.} and Anjum, {D. H.} and J. Li and R. Hull and N. Klymko and Hoyt, {J. L.}",

year = "2003",

month = aug,

day = "4",

doi = "10.1063/1.1598649",

language = "English (US)",

volume = "83",

pages = "875--877",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AMER INST PHYSICS",

number = "5",

}

TY - JOUR

T1 - Effect of rapid thermal annealing on strain in ultrathin strained silicon on insulator layers

AU - Drake, T. S.

AU - Ní Chléirigh, C.

AU - Lee, M. L.

AU - Pitera, A. J.

AU - Fitzgerald, E. A.

AU - Antoniadis, D. A.

AU - Anjum, D. H.

AU - Li, J.

AU - Hull, R.

AU - Klymko, N.

AU - Hoyt, J. L.

PY - 2003/8/4

Y1 - 2003/8/4

N2 - A study was performed on effect of rapid thermal annealing on strain in ultrathin strained silicon on insulator layers. The fabrication of these layers was performed by epitaxial growth of strained silicon on relaxed SiGe, wafer bonding and an etch-back technique. It was found that on using 325 nm Raman spectroscopy, no strain relaxation was observed.

AB - A study was performed on effect of rapid thermal annealing on strain in ultrathin strained silicon on insulator layers. The fabrication of these layers was performed by epitaxial growth of strained silicon on relaxed SiGe, wafer bonding and an etch-back technique. It was found that on using 325 nm Raman spectroscopy, no strain relaxation was observed.

UR - http://www.scopus.com/inward/record.url?scp=0042378545&partnerID=8YFLogxK

U2 - 10.1063/1.1598649

DO - 10.1063/1.1598649

M3 - Article

AN - SCOPUS:0042378545

SN - 0003-6951

VL - 83

SP - 875

EP - 877

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

ER -

Effect of rapid thermal annealing on strain in ultrathin strained silicon on insulator layers

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this