Effective doping of single-layer graphene from underlying SiO2 substrates

Yumeng Shi*, Xiaochen Dong, Peng Chen, Junling Wang, Lain Jong Li

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

182 Scopus citations

Abstract

When a single-layer graphene (SLG) is on SiO2 substrates, the charge exchange at their interface results in a dipole, which direction strongly depends on the contact potential difference between the SLG and the substrates. Due to the longer experimental charge screening length of SLG than its thickness, the charge redistribution imposes effective p or n doping to SLG films. The substrate-dependent doping of SLG films is further confirmed by Raman and electrical measurements. Also, the unique electronic structures of SLG films make them sensitive to the doping rather than effective gating from the SiO2 substrates.

Original languageEnglish (US)
Article number115402
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume79
Issue number11
DOIs
StatePublished - Mar 3 2009
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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