Effects of Al-C ion-implantation and annealing in epitaxial 6H-SiC studied by structural and optical techniques

Z. C. Feng; I. Ferguson; R. A. Stall; K. Li; Y. Shi; H. Singh; K. Tone; J. H. Zhao; A. T.S. Wee; K. L. Tan; F. Adar; B. Lenain

doi:10.4028/www.scientific.net/msf.264-268.693

Effects of Al-C ion-implantation and annealing in epitaxial 6H-SiC studied by structural and optical techniques

Z. C. Feng^*, I. Ferguson, R. A. Stall, K. Li, Y. Shi, H. Singh, K. Tone, J. H. Zhao, A. T.S. Wee, K. L. Tan, F. Adar, B. Lenain

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Effects of Al⁺-C⁺ co-implantation and annealing in epitaxial n-type 6H-SiC have been studied by high resolution X-ray diffraction (HRXRD), Fourier transform infrared (FTIR) reflectance, Raman scattering (RS) and Secondary ion mass spectroscopy (SIMS). Correlations between structural/optical properties and ion implantation/annealing processes are presented. The recovery of the 6H-SiC crystallinity due to the high temperature annealing after Al⁺-C⁺ implantation has been realized and confirmed by this study.

Original language	English (US)
Pages (from-to)	693-696
Number of pages	4
Journal	Materials Science Forum
Volume	264-268
Issue number	PART 2
DOIs	https://doi.org/10.4028/www.scientific.net/msf.264-268.693
State	Published - 1998
Externally published	Yes

Keywords

6H-SiC
Annealing
FTIR
Ion-Implantation
Raman Scattering
SIMS
X-Ray Diffraction

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Feng, Z. C., Ferguson, I., Stall, R. A., Li, K., Shi, Y., Singh, H., Tone, K., Zhao, J. H., Wee, A. T. S., Tan, K. L., Adar, F., & Lenain, B. (1998). Effects of Al-C ion-implantation and annealing in epitaxial 6H-SiC studied by structural and optical techniques. Materials Science Forum, 264-268(PART 2), 693-696. https://doi.org/10.4028/www.scientific.net/msf.264-268.693

@article{bc1d761b79ff4d95a0ef1fca8063ae25,

title = "Effects of Al-C ion-implantation and annealing in epitaxial 6H-SiC studied by structural and optical techniques",

abstract = "Effects of Al+-C+ co-implantation and annealing in epitaxial n-type 6H-SiC have been studied by high resolution X-ray diffraction (HRXRD), Fourier transform infrared (FTIR) reflectance, Raman scattering (RS) and Secondary ion mass spectroscopy (SIMS). Correlations between structural/optical properties and ion implantation/annealing processes are presented. The recovery of the 6H-SiC crystallinity due to the high temperature annealing after Al+-C+ implantation has been realized and confirmed by this study.",

keywords = "6H-SiC, Annealing, FTIR, Ion-Implantation, Raman Scattering, SIMS, X-Ray Diffraction",

author = "Feng, {Z. C.} and I. Ferguson and Stall, {R. A.} and K. Li and Y. Shi and H. Singh and K. Tone and Zhao, {J. H.} and Wee, {A. T.S.} and Tan, {K. L.} and F. Adar and B. Lenain",

year = "1998",

doi = "10.4028/www.scientific.net/msf.264-268.693",

language = "English (US)",

volume = "264-268",

pages = "693--696",

journal = "Materials Science Forum",

issn = "0255-5476",

publisher = "Trans Tech Publications Ltd",

number = "PART 2",

}

TY - JOUR

T1 - Effects of Al-C ion-implantation and annealing in epitaxial 6H-SiC studied by structural and optical techniques

AU - Feng, Z. C.

AU - Ferguson, I.

AU - Stall, R. A.

AU - Li, K.

AU - Shi, Y.

AU - Singh, H.

AU - Tone, K.

AU - Zhao, J. H.

AU - Wee, A. T.S.

AU - Tan, K. L.

AU - Adar, F.

AU - Lenain, B.

PY - 1998

Y1 - 1998

N2 - Effects of Al+-C+ co-implantation and annealing in epitaxial n-type 6H-SiC have been studied by high resolution X-ray diffraction (HRXRD), Fourier transform infrared (FTIR) reflectance, Raman scattering (RS) and Secondary ion mass spectroscopy (SIMS). Correlations between structural/optical properties and ion implantation/annealing processes are presented. The recovery of the 6H-SiC crystallinity due to the high temperature annealing after Al+-C+ implantation has been realized and confirmed by this study.

AB - Effects of Al+-C+ co-implantation and annealing in epitaxial n-type 6H-SiC have been studied by high resolution X-ray diffraction (HRXRD), Fourier transform infrared (FTIR) reflectance, Raman scattering (RS) and Secondary ion mass spectroscopy (SIMS). Correlations between structural/optical properties and ion implantation/annealing processes are presented. The recovery of the 6H-SiC crystallinity due to the high temperature annealing after Al+-C+ implantation has been realized and confirmed by this study.

KW - 6H-SiC

KW - Annealing

KW - FTIR

KW - Ion-Implantation

KW - Raman Scattering

KW - SIMS

KW - X-Ray Diffraction

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U2 - 10.4028/www.scientific.net/msf.264-268.693

DO - 10.4028/www.scientific.net/msf.264-268.693

M3 - Article

AN - SCOPUS:4243764699

SN - 0255-5476

VL - 264-268

SP - 693

EP - 696

JO - Materials Science Forum

JF - Materials Science Forum

IS - PART 2

ER -

Effects of Al-C ion-implantation and annealing in epitaxial 6H-SiC studied by structural and optical techniques

Abstract

Keywords

ASJC Scopus subject areas

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