Effects of implantation energy and annealing temperature on the structural evolution of Ge+-implanted amorphous Si

Jr-Hau He; H. H. Lin; W. W. Wu; L. J. Chen

doi:10.1016/j.nimb.2005.05.034

Effects of implantation energy and annealing temperature on the structural evolution of Ge⁺-implanted amorphous Si

Jr-Hau He, H. H. Lin, W. W. Wu, L. J. Chen^*

^*Corresponding author for this work

Computer, Electrical and Mathematical Sciences and Engineering

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

High-resolution transmission electron microscopy in conjunction with autocorrelation function analysis have been applied to investigate the evolution of structural order in Ge⁺-preamorphized silicon layers. (0 0 1)Si wafers were preamorphized with 5 and 10 keV Ge⁺ to a dose of 5 × 10¹⁵ ions/cm². A higher density of embedded nanocrystallites was found to be present in as-implanted amorphous Si layer for 10 keV Ge⁺ than that for 5 keV Ge⁺. The densities of embedded nanocrystallites in Ge⁺-preamorphized Si layer with 5 and 10 keV Ge⁺ were found to diminish with annealing temperature first then increase. The effects of ion-implantation energy and annealing temperature on the structural evolution in Ge⁺-implanted amorphous Si are discussed in terms of ion-beam induced annealing and free energy change of the system. The depth dependence on the density of embedded nanocrystallites is attributed to the nonuniform distribution of Ge atoms.

Original language	English (US)
Pages (from-to)	384-389
Number of pages	6
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	237
Issue number	1-2
DOIs	https://doi.org/10.1016/j.nimb.2005.05.034
State	Published - Aug 1 2005
Event	Ion Implantation Technology Proceedings of the 15th International Conference on Ion Implantation Technology ITT 2004 - Duration: Oct 25 2004 → Oct 27 2004

Keywords

Auto-correlation function
Implantation
Implantation energy
Nanocrystallite
Preamorphization
TEM

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

Access to Document

10.1016/j.nimb.2005.05.034

Cite this

@article{5358f4c184dc4382b6eaf2ca0c8c2860,

title = "Effects of implantation energy and annealing temperature on the structural evolution of Ge+-implanted amorphous Si",

abstract = "High-resolution transmission electron microscopy in conjunction with autocorrelation function analysis have been applied to investigate the evolution of structural order in Ge+-preamorphized silicon layers. (0 0 1)Si wafers were preamorphized with 5 and 10 keV Ge+ to a dose of 5 × 1015 ions/cm2. A higher density of embedded nanocrystallites was found to be present in as-implanted amorphous Si layer for 10 keV Ge+ than that for 5 keV Ge+. The densities of embedded nanocrystallites in Ge+-preamorphized Si layer with 5 and 10 keV Ge+ were found to diminish with annealing temperature first then increase. The effects of ion-implantation energy and annealing temperature on the structural evolution in Ge+-implanted amorphous Si are discussed in terms of ion-beam induced annealing and free energy change of the system. The depth dependence on the density of embedded nanocrystallites is attributed to the nonuniform distribution of Ge atoms.",

keywords = "Auto-correlation function, Implantation, Implantation energy, Nanocrystallite, Preamorphization, TEM",

author = "Jr-Hau He and Lin, {H. H.} and Wu, {W. W.} and Chen, {L. J.}",

year = "2005",

month = aug,

day = "1",

doi = "10.1016/j.nimb.2005.05.034",

language = "English (US)",

volume = "237",

pages = "384--389",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier",

number = "1-2",

note = "Ion Implantation Technology Proceedings of the 15th International Conference on Ion Implantation Technology ITT 2004 ; Conference date: 25-10-2004 Through 27-10-2004",

}

Effects of implantation energy and annealing temperature on the structural evolution of Ge⁺-implanted amorphous Si. / He, Jr-Hau; Lin, H. H.; Wu, W. W. et al.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 237, No. 1-2, 01.08.2005, p. 384-389.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Effects of implantation energy and annealing temperature on the structural evolution of Ge+-implanted amorphous Si

AU - He, Jr-Hau

AU - Lin, H. H.

AU - Wu, W. W.

AU - Chen, L. J.

PY - 2005/8/1

Y1 - 2005/8/1

N2 - High-resolution transmission electron microscopy in conjunction with autocorrelation function analysis have been applied to investigate the evolution of structural order in Ge+-preamorphized silicon layers. (0 0 1)Si wafers were preamorphized with 5 and 10 keV Ge+ to a dose of 5 × 1015 ions/cm2. A higher density of embedded nanocrystallites was found to be present in as-implanted amorphous Si layer for 10 keV Ge+ than that for 5 keV Ge+. The densities of embedded nanocrystallites in Ge+-preamorphized Si layer with 5 and 10 keV Ge+ were found to diminish with annealing temperature first then increase. The effects of ion-implantation energy and annealing temperature on the structural evolution in Ge+-implanted amorphous Si are discussed in terms of ion-beam induced annealing and free energy change of the system. The depth dependence on the density of embedded nanocrystallites is attributed to the nonuniform distribution of Ge atoms.

AB - High-resolution transmission electron microscopy in conjunction with autocorrelation function analysis have been applied to investigate the evolution of structural order in Ge+-preamorphized silicon layers. (0 0 1)Si wafers were preamorphized with 5 and 10 keV Ge+ to a dose of 5 × 1015 ions/cm2. A higher density of embedded nanocrystallites was found to be present in as-implanted amorphous Si layer for 10 keV Ge+ than that for 5 keV Ge+. The densities of embedded nanocrystallites in Ge+-preamorphized Si layer with 5 and 10 keV Ge+ were found to diminish with annealing temperature first then increase. The effects of ion-implantation energy and annealing temperature on the structural evolution in Ge+-implanted amorphous Si are discussed in terms of ion-beam induced annealing and free energy change of the system. The depth dependence on the density of embedded nanocrystallites is attributed to the nonuniform distribution of Ge atoms.

KW - Auto-correlation function

KW - Implantation

KW - Implantation energy

KW - Nanocrystallite

KW - Preamorphization

KW - TEM

UR - http://www.scopus.com/inward/record.url?scp=23444435271&partnerID=8YFLogxK

U2 - 10.1016/j.nimb.2005.05.034

DO - 10.1016/j.nimb.2005.05.034

M3 - Conference article

AN - SCOPUS:23444435271

SN - 0168-583X

VL - 237

SP - 384

EP - 389

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-2

T2 - Ion Implantation Technology Proceedings of the 15th International Conference on Ion Implantation Technology ITT 2004

Y2 - 25 October 2004 through 27 October 2004

ER -