Effects of intermixing on gain and alpha factors of quantum-dash lasers

C. Chen; Y. Wang; C. L. Tan; H. S. Djie; B. S. Ooi; J. C.M. Hwang; G. T. Dang; W. H. Chang

doi:10.1109/LPT.2008.2002747

Effects of intermixing on gain and alpha factors of quantum-dash lasers

C. Chen^*, Y. Wang, C. L. Tan, H. S. Djie, B. S. Ooi, J. C.M. Hwang, G. T. Dang, W. H. Chang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Gain and alpha factors were measured on InAs-InAlGaAs quantum-dash lasers with their heterostructures intermixed by either a dielectric-capping or ion-implantation technique. The laser intermixed by the dielectric-capping technique exhibits a blue shift as much as 93 nm without degrading the laser quality. In comparison, the laser intermixed by the ion-implantation technique has a larger shift but lower differential gain and higher alpha factor. The result implies that quantum-dash lasers of different wavelengths can be effectively integrated on the same chip by the dielectric-capping intermixing technique.

Original language	English (US)
Pages (from-to)	1654-1656
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	20
Issue number	19
DOIs	https://doi.org/10.1109/LPT.2008.2002747
State	Published - 2008
Externally published	Yes

Keywords

Diffusion processes
Gain measurement
Quantum dots
Quantum wells
Quantum wires
Quantum-well lasers
Semiconductor lasers

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2008.2002747

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title = "Effects of intermixing on gain and alpha factors of quantum-dash lasers",

abstract = "Gain and alpha factors were measured on InAs-InAlGaAs quantum-dash lasers with their heterostructures intermixed by either a dielectric-capping or ion-implantation technique. The laser intermixed by the dielectric-capping technique exhibits a blue shift as much as 93 nm without degrading the laser quality. In comparison, the laser intermixed by the ion-implantation technique has a larger shift but lower differential gain and higher alpha factor. The result implies that quantum-dash lasers of different wavelengths can be effectively integrated on the same chip by the dielectric-capping intermixing technique.",

keywords = "Diffusion processes, Gain measurement, Quantum dots, Quantum wells, Quantum wires, Quantum-well lasers, Semiconductor lasers",

author = "C. Chen and Y. Wang and Tan, {C. L.} and Djie, {H. S.} and Ooi, {B. S.} and Hwang, {J. C.M.} and Dang, {G. T.} and Chang, {W. H.}",

year = "2008",

doi = "10.1109/LPT.2008.2002747",

language = "English (US)",

volume = "20",

pages = "1654--1656",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers",

number = "19",

}

TY - JOUR

T1 - Effects of intermixing on gain and alpha factors of quantum-dash lasers

AU - Chen, C.

AU - Wang, Y.

AU - Tan, C. L.

AU - Djie, H. S.

AU - Ooi, B. S.

AU - Hwang, J. C.M.

AU - Dang, G. T.

AU - Chang, W. H.

PY - 2008

Y1 - 2008

N2 - Gain and alpha factors were measured on InAs-InAlGaAs quantum-dash lasers with their heterostructures intermixed by either a dielectric-capping or ion-implantation technique. The laser intermixed by the dielectric-capping technique exhibits a blue shift as much as 93 nm without degrading the laser quality. In comparison, the laser intermixed by the ion-implantation technique has a larger shift but lower differential gain and higher alpha factor. The result implies that quantum-dash lasers of different wavelengths can be effectively integrated on the same chip by the dielectric-capping intermixing technique.

AB - Gain and alpha factors were measured on InAs-InAlGaAs quantum-dash lasers with their heterostructures intermixed by either a dielectric-capping or ion-implantation technique. The laser intermixed by the dielectric-capping technique exhibits a blue shift as much as 93 nm without degrading the laser quality. In comparison, the laser intermixed by the ion-implantation technique has a larger shift but lower differential gain and higher alpha factor. The result implies that quantum-dash lasers of different wavelengths can be effectively integrated on the same chip by the dielectric-capping intermixing technique.

KW - Diffusion processes

KW - Gain measurement

KW - Quantum dots

KW - Quantum wells

KW - Quantum wires

KW - Quantum-well lasers

KW - Semiconductor lasers

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U2 - 10.1109/LPT.2008.2002747

DO - 10.1109/LPT.2008.2002747

M3 - Article

AN - SCOPUS:52149122348

SN - 1041-1135

VL - 20

SP - 1654

EP - 1656

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 19

ER -

Effects of intermixing on gain and alpha factors of quantum-dash lasers

Abstract

Keywords

ASJC Scopus subject areas

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