Abstract
In this letter, the authors investigate the strain induced by titanium nitride (TiN) electrode and effective work function (EWF) tuning for metal-oxide-semiconductor field effect transistors (MOSFETs). Scaling of TiN thickness was found to be effective both in increasing tensile stress on Si substrates and in lowering the EWF of metal gate n -MOSFETs. The device with 3 nm TiN as a gate electrode showed favorable threshold voltage (Vth) for n -MOSFETs as well as higher channel electron mobility by 17% compared to the device with 20 nm TiN film.
Original language | English (US) |
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Article number | 033511 |
Journal | Applied Physics Letters |
Volume | 91 |
Issue number | 3 |
DOIs | |
State | Published - 2007 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)