Effects of oxygen and nitrogen on carbon nanotube growth using a microwave plasma chemical vapor deposition technique

D. J. Yang*, Q. Zhang, S. F. Yoon, J. Ahn, S. G. Wang, Q. Zhou, Q. Wang, J. Q. Li

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

In this paper, we studied the effects of oxygen (O2) and nitrogen (N2) on the growth of carbon nanotubes (CNTs) prepared using microwave plasma-enhanced chemical vapor deposition (MPECVD). CNTs were prepared with 20-100-nm-sized Ni catalyst grains under three different groups of plasma conditions. Scanning electron microscopy (SEM) results show that the quality of CNTs is improved and number density greatly increased with addition of N2 and O 2 in the process. The morphology and Ni composition strongly suggest that the grain size and composition of the Ni catalyst can be modified by the N2 and O2 plasma pretreatments. A nitride-enhanced growth mechanism is also discussed.

Original languageEnglish (US)
Pages (from-to)288-291
Number of pages4
JournalSurface and Coatings Technology
Volume167
Issue number2-3
DOIs
StatePublished - Apr 22 2003
Externally publishedYes

Keywords

  • Carbon nanotubes
  • Microwave plasma-enhanced chemical vapor deposition (MPECVD)
  • Nitrogen
  • Oxygen

ASJC Scopus subject areas

  • General Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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