Efficiency dip observed with InGaN-based multiple quantum well solar cells

Kunyu Lai, G. J. Lin, Yuhrenn Wu, Menglun Tsai, Jr-Hau He

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


The dip of external quantum efficiency (EQE) is observed on In0.15Ga0.85N/GaN multiple quantum well (MQW) solar cells upon the increase of incident optical power density. With indium composition increased to 25%, the EQE dip becomes much less noticeable. The composition dependence of EQE dip is ascribed to the competition between radiative recombination and photocurrent generation in the active region, which are dictated by quantum-confined Stark effect (QCSE) and composition fluctuation in the MQWs.
Original languageEnglish (US)
Pages (from-to)A1753
JournalOptics Express
Issue numberS7
StatePublished - Oct 29 2014

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics


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