Efficiency enhancement of InGaN-based multiple quantum well solar cells employing antireflective ZnO nanorod arrays

G. J. Lin; K. Y. Lai; C. A. Lin; Y. L. Lai; J. H. He

doi:10.1109/LED.2011.2158061

Efficiency enhancement of InGaN-based multiple quantum well solar cells employing antireflective ZnO nanorod arrays

G. J. Lin^*, K. Y. Lai, C. A. Lin, Y. L. Lai, J. H. He

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

Antireflective ZnO nanorod arrays (NRAs) by a scalable chemical method have been applied for InGaN-based multiple quantum well solar cells. The length of the NRAs plays an important role in photovoltaic characteristics. It was found that the 1.1-μm-long NRA results in enhanced conversion efficiency due to the suppressed surface reflection. However, the 2.5-μm-long NRAs, although exhibiting the lowest reflection, lead to slightly deteriorated performances, possibly due to the increased absorption of the NRAs. The results indicate that the absorption of lengthened NRAs should be considered when optimizing their antireflection performances. We demonstrated a viable efficiency-boosting way for photovoltaics.

Original language	English (US)
Article number	5930323
Pages (from-to)	1104-1106
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	32
Issue number	8
DOIs	https://doi.org/10.1109/LED.2011.2158061
State	Published - Aug 2011
Externally published	Yes

Keywords

Antireflection (AR)
InGaN
ZnO nanorod arrays (NRAs)
conversion efficiency
multiple quantum well (MQW)
solar cells

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/LED.2011.2158061

Cite this

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title = "Efficiency enhancement of InGaN-based multiple quantum well solar cells employing antireflective ZnO nanorod arrays",

abstract = "Antireflective ZnO nanorod arrays (NRAs) by a scalable chemical method have been applied for InGaN-based multiple quantum well solar cells. The length of the NRAs plays an important role in photovoltaic characteristics. It was found that the 1.1-μm-long NRA results in enhanced conversion efficiency due to the suppressed surface reflection. However, the 2.5-μm-long NRAs, although exhibiting the lowest reflection, lead to slightly deteriorated performances, possibly due to the increased absorption of the NRAs. The results indicate that the absorption of lengthened NRAs should be considered when optimizing their antireflection performances. We demonstrated a viable efficiency-boosting way for photovoltaics.",

keywords = "Antireflection (AR), InGaN, ZnO nanorod arrays (NRAs), conversion efficiency, multiple quantum well (MQW), solar cells",

author = "Lin, {G. J.} and Lai, {K. Y.} and Lin, {C. A.} and Lai, {Y. L.} and He, {J. H.}",

year = "2011",

month = aug,

doi = "10.1109/LED.2011.2158061",

language = "English (US)",

volume = "32",

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journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Efficiency enhancement of InGaN-based multiple quantum well solar cells employing antireflective ZnO nanorod arrays

AU - Lin, G. J.

AU - Lai, K. Y.

AU - Lin, C. A.

AU - Lai, Y. L.

AU - He, J. H.

PY - 2011/8

Y1 - 2011/8

N2 - Antireflective ZnO nanorod arrays (NRAs) by a scalable chemical method have been applied for InGaN-based multiple quantum well solar cells. The length of the NRAs plays an important role in photovoltaic characteristics. It was found that the 1.1-μm-long NRA results in enhanced conversion efficiency due to the suppressed surface reflection. However, the 2.5-μm-long NRAs, although exhibiting the lowest reflection, lead to slightly deteriorated performances, possibly due to the increased absorption of the NRAs. The results indicate that the absorption of lengthened NRAs should be considered when optimizing their antireflection performances. We demonstrated a viable efficiency-boosting way for photovoltaics.

AB - Antireflective ZnO nanorod arrays (NRAs) by a scalable chemical method have been applied for InGaN-based multiple quantum well solar cells. The length of the NRAs plays an important role in photovoltaic characteristics. It was found that the 1.1-μm-long NRA results in enhanced conversion efficiency due to the suppressed surface reflection. However, the 2.5-μm-long NRAs, although exhibiting the lowest reflection, lead to slightly deteriorated performances, possibly due to the increased absorption of the NRAs. The results indicate that the absorption of lengthened NRAs should be considered when optimizing their antireflection performances. We demonstrated a viable efficiency-boosting way for photovoltaics.

KW - Antireflection (AR)

KW - InGaN

KW - ZnO nanorod arrays (NRAs)

KW - conversion efficiency

KW - multiple quantum well (MQW)

KW - solar cells

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DO - 10.1109/LED.2011.2158061

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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Efficiency enhancement of InGaN-based multiple quantum well solar cells employing antireflective ZnO nanorod arrays

Abstract

Keywords

ASJC Scopus subject areas

UN SDGs

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