Abstract
An all-acceptor napthalenediimide-bithiazole-based co-polymer, P(NDI2OD-BiTz), was synthesized and characterized for application in thin-film transistors. Density functional theory calculations point to an optimal perpendicular dihedral angle of 90° between acceptor units along isolated polymer chains; yet optimized transistors yield electron mobility of 0.11 cm2/(V s) with the use of a zwitterionic naphthalene diimide interlayer. Grazing incidence X-ray diffraction measurements of annealed films reveal that P(NDI2OD-BiTz) adopts a highly ordered edge-on orientation, exactly opposite to similar bithiophene analogs. This report highlights an NDI and thiazole all-acceptor polymer and demonstrates high electron mobility despite its nonplanar backbone conformation.
Original language | English (US) |
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Pages (from-to) | 40070-40077 |
Number of pages | 8 |
Journal | ACS Applied Materials and Interfaces |
Volume | 10 |
Issue number | 46 |
DOIs | |
State | Published - Nov 21 2018 |
Keywords
- all-acceptor
- annealing
- n-type
- naphthalene diimide
- semiconductor
- thiazole
ASJC Scopus subject areas
- General Materials Science