Efficient modeling of integrated narrow-band low noise amplifiers for design space exploration

Tamer Ragheb, Arthur Nieuwoudt, Yehia Massoud

Research output: Chapter in Book/Report/Conference proceedingConference contribution

42 Scopus citations

Abstract

In this paper, we present an analytical model for fully integrated CMOS narrow-band low noise amplifiers (LNA) that enables rapid design space exploration during the synthesis process. The analytical model captures the impact of parasitics on passive components and devices to accurately predict both impedance matching and noise figure. Our results indicate that the model provides on average 39.8% better accuracy in noise figure than several current analytical modeling techniques with five orders of magnitude improvement in simulation time when compared with a circuit-level simulator. Given its speed and accuracy, our LNA model is well-suited for design space exploration. Copyright 2006 ACM.
Original languageEnglish (US)
Title of host publicationProceedings of the ACM Great Lakes Symposium on VLSI, GLSVLSI
PublisherAssociation for Computing Machineryacmhelp@acm.org
Pages187-191
Number of pages5
ISBN (Print)1595933476
DOIs
StatePublished - Jan 1 2006
Externally publishedYes

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