Efficient reduction of graphene oxide catalyzed by copper

Yu Chuan Lin; Keng Ku Liu; Chih Yu Wu; Chih Wei Chu; Jacob Tse Wei Wang; Chi Te Liang; Lain Jong Li

doi:10.1039/c2cp23187e

Efficient reduction of graphene oxide catalyzed by copper

Yu Chuan Lin, Keng Ku Liu, Chih Yu Wu, Chih Wei Chu, Jacob Tse Wei Wang, Chi Te Liang^*, Lain Jong Li

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

We report that copper thin films deposited on top of graphene oxide (GO) serve as an effective catalyst to reduce GO sheets in a diluted hydrogen environment at high temperature. The reduced GO (rGO) sheets exhibit higher effective field-effect hole mobility, up to 80 cm ² V ^-1 s ^-1, and lower sheet resistance (13 kΩ □ ^-1) compared with those reduced by reported methods such as hydrazine and thermal annealing. Raman and XPS characterizations are addressed to study the reduction mechanism on graphene oxide underneath copper thin films. The level of reduction in rGO sheets is examined by Raman spectroscopy and it is well correlated with hole mobility values. The conductivity enhancement is attributed to the growth of the graphitic domain size. This method is not only suitable for reduction of single GO sheets but also applicable to lower the sheet resistance of Langmuir-Blodgett assembled GO films.

Original language	English (US)
Pages (from-to)	3083-3088
Number of pages	6
Journal	Physical Chemistry Chemical Physics
Volume	14
Issue number	9
DOIs	https://doi.org/10.1039/c2cp23187e
State	Published - Feb 28 2012
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy
Physical and Theoretical Chemistry

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10.1039/c2cp23187e

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title = "Efficient reduction of graphene oxide catalyzed by copper",

abstract = "We report that copper thin films deposited on top of graphene oxide (GO) serve as an effective catalyst to reduce GO sheets in a diluted hydrogen environment at high temperature. The reduced GO (rGO) sheets exhibit higher effective field-effect hole mobility, up to 80 cm 2 V -1 s -1, and lower sheet resistance (13 kΩ □ -1) compared with those reduced by reported methods such as hydrazine and thermal annealing. Raman and XPS characterizations are addressed to study the reduction mechanism on graphene oxide underneath copper thin films. The level of reduction in rGO sheets is examined by Raman spectroscopy and it is well correlated with hole mobility values. The conductivity enhancement is attributed to the growth of the graphitic domain size. This method is not only suitable for reduction of single GO sheets but also applicable to lower the sheet resistance of Langmuir-Blodgett assembled GO films.",

author = "Lin, {Yu Chuan} and Liu, {Keng Ku} and Wu, {Chih Yu} and Chu, {Chih Wei} and Wang, {Jacob Tse Wei} and Liang, {Chi Te} and Li, {Lain Jong}",

year = "2012",

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doi = "10.1039/c2cp23187e",

language = "English (US)",

volume = "14",

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journal = "Physical Chemistry Chemical Physics",

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T1 - Efficient reduction of graphene oxide catalyzed by copper

AU - Lin, Yu Chuan

AU - Liu, Keng Ku

AU - Wu, Chih Yu

AU - Chu, Chih Wei

AU - Wang, Jacob Tse Wei

AU - Liang, Chi Te

AU - Li, Lain Jong

PY - 2012/2/28

Y1 - 2012/2/28

N2 - We report that copper thin films deposited on top of graphene oxide (GO) serve as an effective catalyst to reduce GO sheets in a diluted hydrogen environment at high temperature. The reduced GO (rGO) sheets exhibit higher effective field-effect hole mobility, up to 80 cm 2 V -1 s -1, and lower sheet resistance (13 kΩ □ -1) compared with those reduced by reported methods such as hydrazine and thermal annealing. Raman and XPS characterizations are addressed to study the reduction mechanism on graphene oxide underneath copper thin films. The level of reduction in rGO sheets is examined by Raman spectroscopy and it is well correlated with hole mobility values. The conductivity enhancement is attributed to the growth of the graphitic domain size. This method is not only suitable for reduction of single GO sheets but also applicable to lower the sheet resistance of Langmuir-Blodgett assembled GO films.

AB - We report that copper thin films deposited on top of graphene oxide (GO) serve as an effective catalyst to reduce GO sheets in a diluted hydrogen environment at high temperature. The reduced GO (rGO) sheets exhibit higher effective field-effect hole mobility, up to 80 cm 2 V -1 s -1, and lower sheet resistance (13 kΩ □ -1) compared with those reduced by reported methods such as hydrazine and thermal annealing. Raman and XPS characterizations are addressed to study the reduction mechanism on graphene oxide underneath copper thin films. The level of reduction in rGO sheets is examined by Raman spectroscopy and it is well correlated with hole mobility values. The conductivity enhancement is attributed to the growth of the graphitic domain size. This method is not only suitable for reduction of single GO sheets but also applicable to lower the sheet resistance of Langmuir-Blodgett assembled GO films.

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DO - 10.1039/c2cp23187e

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JO - Physical Chemistry Chemical Physics

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IS - 9

ER -

Efficient reduction of graphene oxide catalyzed by copper

Abstract

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