Electrical bias stressing and radiation induced charge trapping in HfO 2/SiO2 dielectric stacks

R. A.B. Devine; T. Busani; Manuel Quevedo-Lopez; Husam Niman Alshareef

doi:10.1063/1.2727435

Electrical bias stressing and radiation induced charge trapping in HfO ₂/SiO₂ dielectric stacks

R. A.B. Devine^*, T. Busani, Manuel Quevedo-Lopez, Husam Niman Alshareef

^*Corresponding author for this work

Physical Sciences and Engineering

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Electrical bias stressing and X irradiation experiments have been carried out on HfO2 / SiO2 dielectric stacks. Evidence is found for a negative electric field induced positive charge injection and trapping and radiation induced positive charge trapping. Positive electric fields associated with radiation result in negative charge trapping. Potential-induced cyclic injection/removal of positive charge is also observed. It is suggested that these structures are radiation soft.

Original language	English (US)
Article number	104101
Journal	Journal of Applied Physics
Volume	101
Issue number	10
DOIs	https://doi.org/10.1063/1.2727435
State	Published - Jun 11 2007

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Electrical bias stressing and radiation induced charge trapping in HfO 2/SiO2 dielectric stacks",

abstract = "Electrical bias stressing and X irradiation experiments have been carried out on HfO2 / SiO2 dielectric stacks. Evidence is found for a negative electric field induced positive charge injection and trapping and radiation induced positive charge trapping. Positive electric fields associated with radiation result in negative charge trapping. Potential-induced cyclic injection/removal of positive charge is also observed. It is suggested that these structures are radiation soft.",

author = "Devine, {R. A.B.} and T. Busani and Manuel Quevedo-Lopez and Alshareef, {Husam Niman}",

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AU - Devine, R. A.B.

AU - Busani, T.

AU - Quevedo-Lopez, Manuel

AU - Alshareef, Husam Niman

PY - 2007/6/11

Y1 - 2007/6/11

N2 - Electrical bias stressing and X irradiation experiments have been carried out on HfO2 / SiO2 dielectric stacks. Evidence is found for a negative electric field induced positive charge injection and trapping and radiation induced positive charge trapping. Positive electric fields associated with radiation result in negative charge trapping. Potential-induced cyclic injection/removal of positive charge is also observed. It is suggested that these structures are radiation soft.

AB - Electrical bias stressing and X irradiation experiments have been carried out on HfO2 / SiO2 dielectric stacks. Evidence is found for a negative electric field induced positive charge injection and trapping and radiation induced positive charge trapping. Positive electric fields associated with radiation result in negative charge trapping. Potential-induced cyclic injection/removal of positive charge is also observed. It is suggested that these structures are radiation soft.

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DO - 10.1063/1.2727435

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Electrical bias stressing and radiation induced charge trapping in HfO ₂/SiO₂ dielectric stacks

Abstract

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