Electrical bias stressing and radiation induced charge trapping in HfO 2/SiO2 dielectric stacks

R. A.B. Devine; T. Busani; Manuel Quevedo-Lopez; H. N. Alshareef

doi:10.1063/1.2727435

Electrical bias stressing and radiation induced charge trapping in HfO ₂/SiO₂ dielectric stacks

R. A.B. Devine^*, T. Busani, Manuel Quevedo-Lopez, H. N. Alshareef

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Electrical bias stressing and X irradiation experiments have been carried out on HfO2 / SiO2 dielectric stacks. Evidence is found for a negative electric field induced positive charge injection and trapping and radiation induced positive charge trapping. Positive electric fields associated with radiation result in negative charge trapping. Potential-induced cyclic injection/removal of positive charge is also observed. It is suggested that these structures are radiation soft.

Original language	English (US)
Article number	104101
Journal	Journal of Applied Physics
Volume	101
Issue number	10
DOIs	https://doi.org/10.1063/1.2727435
State	Published - 2007
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.2727435

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@article{7c31887ed41c4027bdf49045ffd68401,

title = "Electrical bias stressing and radiation induced charge trapping in HfO 2/SiO2 dielectric stacks",

abstract = "Electrical bias stressing and X irradiation experiments have been carried out on HfO2 / SiO2 dielectric stacks. Evidence is found for a negative electric field induced positive charge injection and trapping and radiation induced positive charge trapping. Positive electric fields associated with radiation result in negative charge trapping. Potential-induced cyclic injection/removal of positive charge is also observed. It is suggested that these structures are radiation soft.",

author = "Devine, {R. A.B.} and T. Busani and Manuel Quevedo-Lopez and Alshareef, {H. N.}",

year = "2007",

doi = "10.1063/1.2727435",

language = "English (US)",

volume = "101",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "AIP Publishing",

number = "10",

}

TY - JOUR

T1 - Electrical bias stressing and radiation induced charge trapping in HfO 2/SiO2 dielectric stacks

AU - Devine, R. A.B.

AU - Busani, T.

AU - Quevedo-Lopez, Manuel

AU - Alshareef, H. N.

PY - 2007

Y1 - 2007

N2 - Electrical bias stressing and X irradiation experiments have been carried out on HfO2 / SiO2 dielectric stacks. Evidence is found for a negative electric field induced positive charge injection and trapping and radiation induced positive charge trapping. Positive electric fields associated with radiation result in negative charge trapping. Potential-induced cyclic injection/removal of positive charge is also observed. It is suggested that these structures are radiation soft.

AB - Electrical bias stressing and X irradiation experiments have been carried out on HfO2 / SiO2 dielectric stacks. Evidence is found for a negative electric field induced positive charge injection and trapping and radiation induced positive charge trapping. Positive electric fields associated with radiation result in negative charge trapping. Potential-induced cyclic injection/removal of positive charge is also observed. It is suggested that these structures are radiation soft.

UR - http://www.scopus.com/inward/record.url?scp=34249899399&partnerID=8YFLogxK

U2 - 10.1063/1.2727435

DO - 10.1063/1.2727435

M3 - Article

AN - SCOPUS:34249899399

SN - 0021-8979

VL - 101

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

M1 - 104101

ER -

Electrical bias stressing and radiation induced charge trapping in HfO ₂/SiO₂ dielectric stacks

Abstract

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