Electrical control of memristance and magnetoresistance in oxide magnetic tunnel junctions

Kun Zhang, Yan-ling Cao, Yue-wen Fang, Qiang Li, Jie Zhang, Chun-gang Duan, Shi-shen Yan, Yu-feng Tian, Rong Huang, Rong-kun Zheng, Shi-shou Kang, Yan-xue Chen, Guo-lei Liu, Liang-mo Mei

Research output: Contribution to journalArticlepeer-review

22 Scopus citations


Electric-field control of magnetic and transport properties of magnetic tunnel junctions has promising applications in spintronics. Here, we experimentally demonstrate a reversible electrical manipulation of memristance, magnetoresistance, and exchange bias in Co/CoO–ZnO/Co magnetic tunnel junctions, which enables the realization of four nonvolatile resistance states. Moreover, greatly enhanced tunneling magnetoresistance of 68% was observed due to the enhanced spin polarization of the bottom Co/CoO interface. The ab initio calculations further indicate that the spin polarization of the Co/CoO interface is as high as 73% near the Fermi level and plenty of oxygen vacancies can induce metal–insulator transition of the CoO1−v layer. Thus, the electrical manipulation mechanism on the memristance, magnetoresistance and exchange bias can be attributed to the electric-field-driven migration of oxygen ions/vacancies between very thin CoO and ZnO layers.
Original languageEnglish (US)
Pages (from-to)6334-6339
Number of pages6
Issue number14
StatePublished - 2015
Externally publishedYes


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