Electrical control of memristance and magnetoresistance in oxide magnetic tunnel junctions

Kun Zhang; Yan-ling Cao; Yue-wen Fang; Qiang Li; Jie Zhang; Chun-gang Duan; Shi-shen Yan; Yu-feng Tian; Rong Huang; Rong-kun Zheng; Shi-shou Kang; Yan-xue Chen; Guo-lei Liu; Liang-mo Mei

doi:10.1039/c5nr00522a

Electrical control of memristance and magnetoresistance in oxide magnetic tunnel junctions

Kun Zhang, Yan-ling Cao, Yue-wen Fang, Qiang Li, Jie Zhang, Chun-gang Duan, Shi-shen Yan, Yu-feng Tian, Rong Huang, Rong-kun Zheng, Shi-shou Kang, Yan-xue Chen, Guo-lei Liu, Liang-mo Mei

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Abstract

Electric-field control of magnetic and transport properties of magnetic tunnel junctions has promising applications in spintronics. Here, we experimentally demonstrate a reversible electrical manipulation of memristance, magnetoresistance, and exchange bias in Co/CoO–ZnO/Co magnetic tunnel junctions, which enables the realization of four nonvolatile resistance states. Moreover, greatly enhanced tunneling magnetoresistance of 68% was observed due to the enhanced spin polarization of the bottom Co/CoO interface. The ab initio calculations further indicate that the spin polarization of the Co/CoO interface is as high as 73% near the Fermi level and plenty of oxygen vacancies can induce metal–insulator transition of the CoO1−v layer. Thus, the electrical manipulation mechanism on the memristance, magnetoresistance and exchange bias can be attributed to the electric-field-driven migration of oxygen ions/vacancies between very thin CoO and ZnO layers.

Original language	English (US)
Pages (from-to)	6334-6339
Number of pages	6
Journal	Nanoscale
Volume	7
Issue number	14
DOIs	https://doi.org/10.1039/c5nr00522a
State	Published - 2015
Externally published	Yes

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title = "Electrical control of memristance and magnetoresistance in oxide magnetic tunnel junctions",

abstract = "Electric-field control of magnetic and transport properties of magnetic tunnel junctions has promising applications in spintronics. Here, we experimentally demonstrate a reversible electrical manipulation of memristance, magnetoresistance, and exchange bias in Co/CoO–ZnO/Co magnetic tunnel junctions, which enables the realization of four nonvolatile resistance states. Moreover, greatly enhanced tunneling magnetoresistance of 68% was observed due to the enhanced spin polarization of the bottom Co/CoO interface. The ab initio calculations further indicate that the spin polarization of the Co/CoO interface is as high as 73% near the Fermi level and plenty of oxygen vacancies can induce metal–insulator transition of the CoO1−v layer. Thus, the electrical manipulation mechanism on the memristance, magnetoresistance and exchange bias can be attributed to the electric-field-driven migration of oxygen ions/vacancies between very thin CoO and ZnO layers.",

author = "Kun Zhang and Yan-ling Cao and Yue-wen Fang and Qiang Li and Jie Zhang and Chun-gang Duan and Shi-shen Yan and Yu-feng Tian and Rong Huang and Rong-kun Zheng and Shi-shou Kang and Yan-xue Chen and Guo-lei Liu and Liang-mo Mei",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: Y.W. Fang appreciates useful discussions with U.D. Wdowik of Pedagogical University, S. Grytsyuk from KAUST and Prof. Marie-Liesse Doublet from CNRS. This work was supported by the key program of NSFC no. 11434006, the NBRP of China no. 2013CB922303 and 2014CB921104, the NSF for Distinguished Young Scholars of China (no. 51125004), 111 project no. B13029, and NSFC no. 11374187 and 61125403. This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

year = "2015",

doi = "10.1039/c5nr00522a",

language = "English (US)",

volume = "7",

pages = "6334--6339",

journal = "Nanoscale",

issn = "2040-3364",

publisher = "Royal Society of Chemistry",

number = "14",

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TY - JOUR

T1 - Electrical control of memristance and magnetoresistance in oxide magnetic tunnel junctions

AU - Zhang, Kun

AU - Cao, Yan-ling

AU - Fang, Yue-wen

AU - Li, Qiang

AU - Zhang, Jie

AU - Duan, Chun-gang

AU - Yan, Shi-shen

AU - Tian, Yu-feng

AU - Huang, Rong

AU - Zheng, Rong-kun

AU - Kang, Shi-shou

AU - Chen, Yan-xue

AU - Liu, Guo-lei

AU - Mei, Liang-mo

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: Y.W. Fang appreciates useful discussions with U.D. Wdowik of Pedagogical University, S. Grytsyuk from KAUST and Prof. Marie-Liesse Doublet from CNRS. This work was supported by the key program of NSFC no. 11434006, the NBRP of China no. 2013CB922303 and 2014CB921104, the NSF for Distinguished Young Scholars of China (no. 51125004), 111 project no. B13029, and NSFC no. 11374187 and 61125403. This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2015

Y1 - 2015

N2 - Electric-field control of magnetic and transport properties of magnetic tunnel junctions has promising applications in spintronics. Here, we experimentally demonstrate a reversible electrical manipulation of memristance, magnetoresistance, and exchange bias in Co/CoO–ZnO/Co magnetic tunnel junctions, which enables the realization of four nonvolatile resistance states. Moreover, greatly enhanced tunneling magnetoresistance of 68% was observed due to the enhanced spin polarization of the bottom Co/CoO interface. The ab initio calculations further indicate that the spin polarization of the Co/CoO interface is as high as 73% near the Fermi level and plenty of oxygen vacancies can induce metal–insulator transition of the CoO1−v layer. Thus, the electrical manipulation mechanism on the memristance, magnetoresistance and exchange bias can be attributed to the electric-field-driven migration of oxygen ions/vacancies between very thin CoO and ZnO layers.

AB - Electric-field control of magnetic and transport properties of magnetic tunnel junctions has promising applications in spintronics. Here, we experimentally demonstrate a reversible electrical manipulation of memristance, magnetoresistance, and exchange bias in Co/CoO–ZnO/Co magnetic tunnel junctions, which enables the realization of four nonvolatile resistance states. Moreover, greatly enhanced tunneling magnetoresistance of 68% was observed due to the enhanced spin polarization of the bottom Co/CoO interface. The ab initio calculations further indicate that the spin polarization of the Co/CoO interface is as high as 73% near the Fermi level and plenty of oxygen vacancies can induce metal–insulator transition of the CoO1−v layer. Thus, the electrical manipulation mechanism on the memristance, magnetoresistance and exchange bias can be attributed to the electric-field-driven migration of oxygen ions/vacancies between very thin CoO and ZnO layers.

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UR - http://xlink.rsc.org/?DOI=C5NR00522A

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DO - 10.1039/c5nr00522a

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SN - 2040-3364

VL - 7

SP - 6334

EP - 6339

JO - Nanoscale

JF - Nanoscale

IS - 14

ER -

Electrical control of memristance and magnetoresistance in oxide magnetic tunnel junctions

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