Electrical Homogeneity of Large-Area Chemical Vapor Deposited Multilayer Hexagonal Boron Nitride Sheets

Fei Hui; Wenjing Fang; Wei Sun Leong; Tewa Kpulun; Haozhe Wang; Hui Ying Yang; Marco A. Villena; Gary Harris; Jing Kong; Mario Lanza

doi:10.1021/acsami.7b09417

Electrical Homogeneity of Large-Area Chemical Vapor Deposited Multilayer Hexagonal Boron Nitride Sheets

Fei Hui, Wenjing Fang, Wei Sun Leong, Tewa Kpulun, Haozhe Wang, Hui Ying Yang, Marco A. Villena, Gary Harris, Jing Kong, Mario Lanza

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

Large-area hexagonal boron nitride (h-BN) can be grown on polycrystalline metallic substrates via chemical vapor deposition (CVD), but the impact of local inhomogeneities on the electrical properties of the h-BN and their effect in electronic devices is unknown. Conductive atomic force microscopy (CAFM) and probe station characterization show that the tunneling current across the h-BN stack fluctuates up to 3 orders of magnitude from one substrate (Pt) grain to another. Interestingly, the variability in the tunneling current across the h-BN within the same substrate grain is very low, which may enable the use of CVD-grown h-BN in ultra scaled technologies.

Original language	English (US)
Pages (from-to)	39895-39900
Number of pages	6
Journal	ACS Applied Materials and Interfaces
Volume	9
Issue number	46
DOIs	https://doi.org/10.1021/acsami.7b09417
State	Published - Nov 22 2017
Externally published	Yes

ASJC Scopus subject areas

General Materials Science

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10.1021/acsami.7b09417

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title = "Electrical Homogeneity of Large-Area Chemical Vapor Deposited Multilayer Hexagonal Boron Nitride Sheets",

abstract = "Large-area hexagonal boron nitride (h-BN) can be grown on polycrystalline metallic substrates via chemical vapor deposition (CVD), but the impact of local inhomogeneities on the electrical properties of the h-BN and their effect in electronic devices is unknown. Conductive atomic force microscopy (CAFM) and probe station characterization show that the tunneling current across the h-BN stack fluctuates up to 3 orders of magnitude from one substrate (Pt) grain to another. Interestingly, the variability in the tunneling current across the h-BN within the same substrate grain is very low, which may enable the use of CVD-grown h-BN in ultra scaled technologies.",

author = "Fei Hui and Wenjing Fang and Leong, {Wei Sun} and Tewa Kpulun and Haozhe Wang and Yang, {Hui Ying} and Villena, {Marco A.} and Gary Harris and Jing Kong and Mario Lanza",

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doi = "10.1021/acsami.7b09417",

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T1 - Electrical Homogeneity of Large-Area Chemical Vapor Deposited Multilayer Hexagonal Boron Nitride Sheets

AU - Hui, Fei

AU - Fang, Wenjing

AU - Leong, Wei Sun

AU - Kpulun, Tewa

AU - Wang, Haozhe

AU - Yang, Hui Ying

AU - Villena, Marco A.

AU - Harris, Gary

AU - Kong, Jing

AU - Lanza, Mario

N1 - Generated from Scopus record by KAUST IRTS on 2021-03-16

PY - 2017/11/22

Y1 - 2017/11/22

N2 - Large-area hexagonal boron nitride (h-BN) can be grown on polycrystalline metallic substrates via chemical vapor deposition (CVD), but the impact of local inhomogeneities on the electrical properties of the h-BN and their effect in electronic devices is unknown. Conductive atomic force microscopy (CAFM) and probe station characterization show that the tunneling current across the h-BN stack fluctuates up to 3 orders of magnitude from one substrate (Pt) grain to another. Interestingly, the variability in the tunneling current across the h-BN within the same substrate grain is very low, which may enable the use of CVD-grown h-BN in ultra scaled technologies.

AB - Large-area hexagonal boron nitride (h-BN) can be grown on polycrystalline metallic substrates via chemical vapor deposition (CVD), but the impact of local inhomogeneities on the electrical properties of the h-BN and their effect in electronic devices is unknown. Conductive atomic force microscopy (CAFM) and probe station characterization show that the tunneling current across the h-BN stack fluctuates up to 3 orders of magnitude from one substrate (Pt) grain to another. Interestingly, the variability in the tunneling current across the h-BN within the same substrate grain is very low, which may enable the use of CVD-grown h-BN in ultra scaled technologies.

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U2 - 10.1021/acsami.7b09417

DO - 10.1021/acsami.7b09417

M3 - Article

SN - 1944-8252

VL - 9

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EP - 39900

JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

IS - 46

ER -

Electrical Homogeneity of Large-Area Chemical Vapor Deposited Multilayer Hexagonal Boron Nitride Sheets

Abstract

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