TY - JOUR
T1 - Electrical Properties of Epitaxial Thin Films of Oxyhydrides ATiO3-xHx (A = Ba and Sr)
AU - Bouilly, Guillaume
AU - Yajima, Takeshi
AU - Terashima, Takahito
AU - Yoshimune, Wataru
AU - Nakano, Kousuke
AU - Tassel, Cédric
AU - Kususe, Yoshiro
AU - Fujita, Koji
AU - Tanaka, Katsuhisa
AU - Yamamoto, Takafumi
AU - Kobayashi, Yoji
AU - Kageyama, Hiroshi
N1 - Generated from Scopus record by KAUST IRTS on 2022-09-13
PY - 2015/9/22
Y1 - 2015/9/22
N2 - We have studied electronic properties of perovskite oxyhydrides ATiO3-xHx (A = Ba, Sr). Epitaxial thin films of ATiO3-xHx with various hydride compositions, up to x = 0.58 for Ba and x = 0.45 for Sr, are prepared by the low-temperature CaH2 reduction of the corresponding oxide films deposited on (LaAlO3)0.3(SrAl0.5Ta0.5O3)0.7 (LSAT) substrates by pulsed laser deposition. Resistivity measurements for A = Sr show a metallic phase over a wide range of H- composition, implying a substantial stabilization of H 1s orbitals that should be distributed over O 2p orbitals. On the other hand, for A = Ba, a semiconducting behavior is seen up to ∼5-8% of H- substitution. Interestingly, a similar contrasting behavior is observed in a Nb-substituted BaTiO3 and SrTiO3, which suggests that a local cation-off centering in lightly doped Ba films creates in-gap states in the band structure (as opposed to the Sr films), hindering the electron transport.
AB - We have studied electronic properties of perovskite oxyhydrides ATiO3-xHx (A = Ba, Sr). Epitaxial thin films of ATiO3-xHx with various hydride compositions, up to x = 0.58 for Ba and x = 0.45 for Sr, are prepared by the low-temperature CaH2 reduction of the corresponding oxide films deposited on (LaAlO3)0.3(SrAl0.5Ta0.5O3)0.7 (LSAT) substrates by pulsed laser deposition. Resistivity measurements for A = Sr show a metallic phase over a wide range of H- composition, implying a substantial stabilization of H 1s orbitals that should be distributed over O 2p orbitals. On the other hand, for A = Ba, a semiconducting behavior is seen up to ∼5-8% of H- substitution. Interestingly, a similar contrasting behavior is observed in a Nb-substituted BaTiO3 and SrTiO3, which suggests that a local cation-off centering in lightly doped Ba films creates in-gap states in the band structure (as opposed to the Sr films), hindering the electron transport.
UR - https://pubs.acs.org/doi/10.1021/acs.chemmater.5b02374
UR - http://www.scopus.com/inward/record.url?scp=84942279948&partnerID=8YFLogxK
U2 - 10.1021/acs.chemmater.5b02374
DO - 10.1021/acs.chemmater.5b02374
M3 - Article
SN - 1520-5002
VL - 27
SP - 6354
EP - 6359
JO - Chemistry of Materials
JF - Chemistry of Materials
IS - 18
ER -