Electrical Properties of Epitaxial Thin Films of Oxyhydrides ATiO3-xHx (A = Ba and Sr)

Guillaume Bouilly, Takeshi Yajima, Takahito Terashima, Wataru Yoshimune, Kousuke Nakano, Cédric Tassel, Yoshiro Kususe, Koji Fujita, Katsuhisa Tanaka, Takafumi Yamamoto, Yoji Kobayashi, Hiroshi Kageyama

Research output: Contribution to journalArticlepeer-review

36 Scopus citations


We have studied electronic properties of perovskite oxyhydrides ATiO3-xHx (A = Ba, Sr). Epitaxial thin films of ATiO3-xHx with various hydride compositions, up to x = 0.58 for Ba and x = 0.45 for Sr, are prepared by the low-temperature CaH2 reduction of the corresponding oxide films deposited on (LaAlO3)0.3(SrAl0.5Ta0.5O3)0.7 (LSAT) substrates by pulsed laser deposition. Resistivity measurements for A = Sr show a metallic phase over a wide range of H- composition, implying a substantial stabilization of H 1s orbitals that should be distributed over O 2p orbitals. On the other hand, for A = Ba, a semiconducting behavior is seen up to ∼5-8% of H- substitution. Interestingly, a similar contrasting behavior is observed in a Nb-substituted BaTiO3 and SrTiO3, which suggests that a local cation-off centering in lightly doped Ba films creates in-gap states in the band structure (as opposed to the Sr films), hindering the electron transport.
Original languageEnglish (US)
Pages (from-to)6354-6359
Number of pages6
JournalChemistry of Materials
Issue number18
StatePublished - Sep 22 2015
Externally publishedYes

ASJC Scopus subject areas

  • Materials Chemistry
  • General Chemical Engineering
  • General Chemistry


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