Abstract
Mg3Sb1.5Bi0.5-based Zintl compounds have attracted extensive attention as potential thermoelectric materials due to their earth-abundant elements. However, pure and intrinsic Mg3Sb1.5Bi0.5 manifests a poor thermoelectric performance because of its low electrical conductivity of about 3 × 102 S/m at room temperature. In this work, In and Se co-doping was carried out to optimize the thermoelectric performance of n-type Mg3Sb1.5Bi0.5-based material. The experimental results revealed that the carrier concentration and mobility of Mg3Sb1.5Bi0.5 significantly increased after In and Se co-doping, leading to an improvement of power factor. Simultaneously, lattice thermal conductivity was significantly reduced due to the large mass difference between In and Mg. A maximum zT of 1.64 at 723 K was obtained for the Mg3.17In0.03Sb1.5Bi0.49Se0.01 sample. And an average zT value of about 1.1 between 300 and 723 K was achieved, which insures its possible application at medium temperature range as a non-toxic and low-cost TE material.
Original language | English (US) |
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Pages (from-to) | 431-437 |
Number of pages | 7 |
Journal | Journal of Materiomics |
Volume | 9 |
Issue number | 3 |
DOIs | |
State | Published - May 2023 |
Keywords
- In&Se co-doping
- n-type MgSbBi
- Thermoelectric property
- Zintl compound
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces, Coatings and Films
- Metals and Alloys