Electrically active dislocations at the Si/GaAs interface

S. Lopatin^*, G. Duscher

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Original language	English (US)
Pages (from-to)	336-337
Number of pages	2
Journal	Microscopy and Microanalysis
Volume	10
Issue number	SUPPL. 2
DOIs	https://doi.org/10.1017/S1431927604882783
State	Published - 2004
Externally published	Yes

ASJC Scopus subject areas

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author = "S. Lopatin and G. Duscher",

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AU - Lopatin, S.

AU - Duscher, G.

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