Electrically pumped continuous wave quantum dot lasers epitaxially grown on patterned, on-axis (001) Si

Justin Norman; M. J. Kennedy; Jennifer Selvidge; Qiang Li; Yating Wan; Alan Y. Liu; Patrick G. Callahan; McLean P. Echlin; Tresa M. Pollock; Kei May Lau; Arthur C. Gossard; John E. Bowers

doi:10.1364/OE.25.003927

Electrically pumped continuous wave quantum dot lasers epitaxially grown on patterned, on-axis (001) Si

Justin Norman, M. J. Kennedy, Jennifer Selvidge, Qiang Li, Yating Wan, Alan Y. Liu, Patrick G. Callahan, McLean P. Echlin, Tresa M. Pollock, Kei May Lau, Arthur C. Gossard, John E. Bowers

Research output: Contribution to journal › Article › peer-review

125 Scopus citations

Abstract

High performance III-V lasers at datacom and telecom wavelengths on on-axis (001) Si are needed for scalable datacenter interconnect technologies. We demonstrate electrically injected quantum dot lasers grown on on-axis (001) Si patterned with {111} vgrooves lying in the [110] direction. No additional Ge buffers or substrate miscut was used. The active region consists of five InAs/InGaAs dot-in-a-well layers. We achieve continuous wave lasing with thresholds as low as 36 mA and operation up to 80°C.

Original language	English (US)
Pages (from-to)	3927-3934
Number of pages	8
Journal	Optics Express
Volume	25
Issue number	4
DOIs	https://doi.org/10.1364/OE.25.003927
State	Published - Feb 20 2017
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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title = "Electrically pumped continuous wave quantum dot lasers epitaxially grown on patterned, on-axis (001) Si",

abstract = "High performance III-V lasers at datacom and telecom wavelengths on on-axis (001) Si are needed for scalable datacenter interconnect technologies. We demonstrate electrically injected quantum dot lasers grown on on-axis (001) Si patterned with {111} vgrooves lying in the [110] direction. No additional Ge buffers or substrate miscut was used. The active region consists of five InAs/InGaAs dot-in-a-well layers. We achieve continuous wave lasing with thresholds as low as 36 mA and operation up to 80°C.",

author = "Justin Norman and Kennedy, {M. J.} and Jennifer Selvidge and Qiang Li and Yating Wan and Liu, {Alan Y.} and Callahan, {Patrick G.} and Echlin, {McLean P.} and Pollock, {Tresa M.} and Lau, {Kei May} and Gossard, {Arthur C.} and Bowers, {John E.}",

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T1 - Electrically pumped continuous wave quantum dot lasers epitaxially grown on patterned, on-axis (001) Si

AU - Norman, Justin

AU - Kennedy, M. J.

AU - Selvidge, Jennifer

AU - Li, Qiang

AU - Wan, Yating

AU - Liu, Alan Y.

AU - Callahan, Patrick G.

AU - Echlin, McLean P.

AU - Pollock, Tresa M.

AU - Lau, Kei May

AU - Gossard, Arthur C.

AU - Bowers, John E.

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-18

PY - 2017/2/20

Y1 - 2017/2/20

N2 - High performance III-V lasers at datacom and telecom wavelengths on on-axis (001) Si are needed for scalable datacenter interconnect technologies. We demonstrate electrically injected quantum dot lasers grown on on-axis (001) Si patterned with {111} vgrooves lying in the [110] direction. No additional Ge buffers or substrate miscut was used. The active region consists of five InAs/InGaAs dot-in-a-well layers. We achieve continuous wave lasing with thresholds as low as 36 mA and operation up to 80°C.

AB - High performance III-V lasers at datacom and telecom wavelengths on on-axis (001) Si are needed for scalable datacenter interconnect technologies. We demonstrate electrically injected quantum dot lasers grown on on-axis (001) Si patterned with {111} vgrooves lying in the [110] direction. No additional Ge buffers or substrate miscut was used. The active region consists of five InAs/InGaAs dot-in-a-well layers. We achieve continuous wave lasing with thresholds as low as 36 mA and operation up to 80°C.

UR - https://opg.optica.org/abstract.cfm?URI=oe-25-4-3927

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DO - 10.1364/OE.25.003927

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EP - 3934

JO - Optics Express

JF - Optics Express

IS - 4

ER -

Electrically pumped continuous wave quantum dot lasers epitaxially grown on patterned, on-axis (001) Si

Abstract

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