Electro-optical properties of polymeric semiconductor devices constructed from poly (3-hexyl thienylene)

K. E. Ziemelis; A. T. Hussain; D. D.C. Bradley; R. H. Friend; J. Rühe; G. Wegner

doi:10.1016/0379-6779(91)91552-L

Electro-optical properties of polymeric semiconductor devices constructed from poly (3-hexyl thienylene)

K. E. Ziemelis, A. T. Hussain, D. D.C. Bradley, R. H. Friend, J. Rühe, G. Wegner

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

MIS structures fabricated with a conjugated polymer as the active semiconductor are well suited for the investigation of charge storage in self-localised excitations. In such a structure, the gate electrode is used to control the surface or space charge densities; the formation of accumulation and inversion layers being of particular interest as charge is introduced into the polymer without associated dopant ions. We report measurements of the electrical and optical properties of devices fabricated with poly (3-hexyl thienylene). © 1991.

Original language	English (US)
Journal	Synthetic Metals
Volume	41
Issue number	3
DOIs	https://doi.org/10.1016/0379-6779(91)91552-L
State	Published - May 6 1991
Externally published	Yes

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title = "Electro-optical properties of polymeric semiconductor devices constructed from poly (3-hexyl thienylene)",

abstract = "MIS structures fabricated with a conjugated polymer as the active semiconductor are well suited for the investigation of charge storage in self-localised excitations. In such a structure, the gate electrode is used to control the surface or space charge densities; the formation of accumulation and inversion layers being of particular interest as charge is introduced into the polymer without associated dopant ions. We report measurements of the electrical and optical properties of devices fabricated with poly (3-hexyl thienylene). {\textcopyright} 1991.",

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T1 - Electro-optical properties of polymeric semiconductor devices constructed from poly (3-hexyl thienylene)

AU - Ziemelis, K. E.

AU - Hussain, A. T.

AU - Bradley, D. D.C.

AU - Friend, R. H.

AU - Rühe, J.

AU - Wegner, G.

N1 - Generated from Scopus record by KAUST IRTS on 2019-11-27

PY - 1991/5/6

Y1 - 1991/5/6

N2 - MIS structures fabricated with a conjugated polymer as the active semiconductor are well suited for the investigation of charge storage in self-localised excitations. In such a structure, the gate electrode is used to control the surface or space charge densities; the formation of accumulation and inversion layers being of particular interest as charge is introduced into the polymer without associated dopant ions. We report measurements of the electrical and optical properties of devices fabricated with poly (3-hexyl thienylene). © 1991.

AB - MIS structures fabricated with a conjugated polymer as the active semiconductor are well suited for the investigation of charge storage in self-localised excitations. In such a structure, the gate electrode is used to control the surface or space charge densities; the formation of accumulation and inversion layers being of particular interest as charge is introduced into the polymer without associated dopant ions. We report measurements of the electrical and optical properties of devices fabricated with poly (3-hexyl thienylene). © 1991.

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DO - 10.1016/0379-6779(91)91552-L

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VL - 41

JO - Synthetic Metals

JF - Synthetic Metals

IS - 3

ER -

Electro-optical properties of polymeric semiconductor devices constructed from poly (3-hexyl thienylene)

Abstract

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