Electrochemical Thin-Film Transistors using Covalent Organic Framework Channel

Mrinal K. Hota; Suman Chandra; Yongjiu Lei; Xiangming Xu; Mohamed N. Hedhili; Abdul Hamid Emwas; Osama Shekhah; Mohamed Eddaoudi; Husam N. Alshareef

doi:10.1002/adfm.202201120

Electrochemical Thin-Film Transistors using Covalent Organic Framework Channel

Mrinal K. Hota, Suman Chandra, Yongjiu Lei, Xiangming Xu, Mohamed N. Hedhili, Abdul Hamid Emwas, Osama Shekhah, Mohamed Eddaoudi^*, Husam N. Alshareef^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

Covalent organic framework (COF) thin films have been successfully prepared and utilized as a channel material in electrical double-layer (EDL) electrochemical transistors. 4,4′-azodianiline (Azo) and 1,3,5-triformylphloroglucinol(Tp) precursors are introduced to prepare azo (-N-N-) functionalized ß-keto-enamine COF (Tp-Azo) thin films. The EDL transistor exhibits a switching ratio of 10³ times, a low threshold voltage of 0.6 V, and a field-effect mobility of 0.53 cm² V⁻¹ s⁻¹. The dynamic behavior of the transistor under different input signals shows responses, which are very similar to the biological synaptic behavior, indicating that the COF devices can be used as artificial synapses. This report opens a new direction in covalent–organic framework development in iontronic applications.

Original language	English (US)
Article number	2201120
Journal	Advanced Functional Materials
Volume	32
Issue number	23
DOIs	https://doi.org/10.1002/adfm.202201120
State	Published - Jun 3 2022

Keywords

covalent organic frameworks
electrochemical transistors
neuromorphic memory
thin films

ASJC Scopus subject areas

General Chemistry
General Materials Science
Condensed Matter Physics

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10.1002/adfm.202201120

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@article{69e889e596b348a38d63b7ccf74a8779,

title = "Electrochemical Thin-Film Transistors using Covalent Organic Framework Channel",

abstract = "Covalent organic framework (COF) thin films have been successfully prepared and utilized as a channel material in electrical double-layer (EDL) electrochemical transistors. 4,4′-azodianiline (Azo) and 1,3,5-triformylphloroglucinol(Tp) precursors are introduced to prepare azo (-N-N-) functionalized {\ss}-keto-enamine COF (Tp-Azo) thin films. The EDL transistor exhibits a switching ratio of 103 times, a low threshold voltage of 0.6 V, and a field-effect mobility of 0.53 cm2 V−1 s−1. The dynamic behavior of the transistor under different input signals shows responses, which are very similar to the biological synaptic behavior, indicating that the COF devices can be used as artificial synapses. This report opens a new direction in covalent–organic framework development in iontronic applications.",

keywords = "covalent organic frameworks, electrochemical transistors, neuromorphic memory, thin films",

author = "Hota, {Mrinal K.} and Suman Chandra and Yongjiu Lei and Xiangming Xu and Hedhili, {Mohamed N.} and Emwas, {Abdul Hamid} and Osama Shekhah and Mohamed Eddaoudi and Alshareef, {Husam N.}",

note = "Funding Information: M.K.H. and S.C. contributed equally to this work. The research reported in this publication was supported by the King Abdullah University of Science and Technology (KAUST). The authors also thank the core laboratory staff and the imaging and characterization staff at KAUST. Publisher Copyright: {\textcopyright} 2022 Wiley-VCH GmbH.",

year = "2022",

month = jun,

day = "3",

doi = "10.1002/adfm.202201120",

language = "English (US)",

volume = "32",

journal = "Advanced Functional Materials",

issn = "1616-301X",

publisher = "Wiley",

number = "23",

}

TY - JOUR

T1 - Electrochemical Thin-Film Transistors using Covalent Organic Framework Channel

AU - Hota, Mrinal K.

AU - Chandra, Suman

AU - Lei, Yongjiu

AU - Xu, Xiangming

AU - Hedhili, Mohamed N.

AU - Emwas, Abdul Hamid

AU - Shekhah, Osama

AU - Eddaoudi, Mohamed

AU - Alshareef, Husam N.

N1 - Funding Information: M.K.H. and S.C. contributed equally to this work. The research reported in this publication was supported by the King Abdullah University of Science and Technology (KAUST). The authors also thank the core laboratory staff and the imaging and characterization staff at KAUST. Publisher Copyright: © 2022 Wiley-VCH GmbH.

PY - 2022/6/3

Y1 - 2022/6/3

N2 - Covalent organic framework (COF) thin films have been successfully prepared and utilized as a channel material in electrical double-layer (EDL) electrochemical transistors. 4,4′-azodianiline (Azo) and 1,3,5-triformylphloroglucinol(Tp) precursors are introduced to prepare azo (-N-N-) functionalized ß-keto-enamine COF (Tp-Azo) thin films. The EDL transistor exhibits a switching ratio of 103 times, a low threshold voltage of 0.6 V, and a field-effect mobility of 0.53 cm2 V−1 s−1. The dynamic behavior of the transistor under different input signals shows responses, which are very similar to the biological synaptic behavior, indicating that the COF devices can be used as artificial synapses. This report opens a new direction in covalent–organic framework development in iontronic applications.

AB - Covalent organic framework (COF) thin films have been successfully prepared and utilized as a channel material in electrical double-layer (EDL) electrochemical transistors. 4,4′-azodianiline (Azo) and 1,3,5-triformylphloroglucinol(Tp) precursors are introduced to prepare azo (-N-N-) functionalized ß-keto-enamine COF (Tp-Azo) thin films. The EDL transistor exhibits a switching ratio of 103 times, a low threshold voltage of 0.6 V, and a field-effect mobility of 0.53 cm2 V−1 s−1. The dynamic behavior of the transistor under different input signals shows responses, which are very similar to the biological synaptic behavior, indicating that the COF devices can be used as artificial synapses. This report opens a new direction in covalent–organic framework development in iontronic applications.

KW - covalent organic frameworks

KW - electrochemical transistors

KW - neuromorphic memory

KW - thin films

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U2 - 10.1002/adfm.202201120

DO - 10.1002/adfm.202201120

M3 - Article

AN - SCOPUS:85125579338

SN - 1616-301X

VL - 32

JO - Advanced Functional Materials

JF - Advanced Functional Materials

IS - 23

M1 - 2201120

ER -

Electrochemical Thin-Film Transistors using Covalent Organic Framework Channel

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