Electrode dependence of resistive switching in Mn-doped ZnO: Filamentary versus interfacial mechanisms

H. Y. Peng; G. P. Li; J. Y. Ye; Z. P. Wei; Z. Zhang; D. D. Wang; G. Z. Xing; T. Wu

doi:10.1063/1.3428365

Electrode dependence of resistive switching in Mn-doped ZnO: Filamentary versus interfacial mechanisms

H. Y. Peng, G. P. Li, J. Y. Ye, Z. P. Wei, Z. Zhang, D. D. Wang, G. Z. Xing, T. Wu

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176 Scopus citations

Abstract

We carry out a comparative study on resistive switching in Mn-doped ZnO thin films; samples grown on Pt and Si show unipolar and bipolar switching behaviors, respectively. Fittings of the current-voltage curves and area dependence of the device resistance reveal the filamentary conduction in Pt/Mn:ZnO/Pt. On the other hand, the interfacial effect dominates in Pt/Mn:ZnO/Si, and its low resistance state exponentially relaxes toward the high resistance state in contrast to the good data retention in Pt/Mn:ZnO/Pt. Our results suggest that selecting electrodes dictates the resistive switching mechanism presumably by affecting the migration dynamics of oxygen vacancies.

Original language	English (US)
Article number	192113
Journal	Applied Physics Letters
Volume	96
Issue number	19
DOIs	https://doi.org/10.1063/1.3428365
State	Published - 2010
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Electrode dependence of resistive switching in Mn-doped ZnO: Filamentary versus interfacial mechanisms",

abstract = "We carry out a comparative study on resistive switching in Mn-doped ZnO thin films; samples grown on Pt and Si show unipolar and bipolar switching behaviors, respectively. Fittings of the current-voltage curves and area dependence of the device resistance reveal the filamentary conduction in Pt/Mn:ZnO/Pt. On the other hand, the interfacial effect dominates in Pt/Mn:ZnO/Si, and its low resistance state exponentially relaxes toward the high resistance state in contrast to the good data retention in Pt/Mn:ZnO/Pt. Our results suggest that selecting electrodes dictates the resistive switching mechanism presumably by affecting the migration dynamics of oxygen vacancies.",

author = "Peng, {H. Y.} and Li, {G. P.} and Ye, {J. Y.} and Wei, {Z. P.} and Z. Zhang and Wang, {D. D.} and Xing, {G. Z.} and T. Wu",

year = "2010",

doi = "10.1063/1.3428365",

language = "English (US)",

volume = "96",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Electrode dependence of resistive switching in Mn-doped ZnO

T2 - Filamentary versus interfacial mechanisms

AU - Peng, H. Y.

AU - Li, G. P.

AU - Ye, J. Y.

AU - Wei, Z. P.

AU - Zhang, Z.

AU - Wang, D. D.

AU - Xing, G. Z.

AU - Wu, T.

PY - 2010

Y1 - 2010

N2 - We carry out a comparative study on resistive switching in Mn-doped ZnO thin films; samples grown on Pt and Si show unipolar and bipolar switching behaviors, respectively. Fittings of the current-voltage curves and area dependence of the device resistance reveal the filamentary conduction in Pt/Mn:ZnO/Pt. On the other hand, the interfacial effect dominates in Pt/Mn:ZnO/Si, and its low resistance state exponentially relaxes toward the high resistance state in contrast to the good data retention in Pt/Mn:ZnO/Pt. Our results suggest that selecting electrodes dictates the resistive switching mechanism presumably by affecting the migration dynamics of oxygen vacancies.

AB - We carry out a comparative study on resistive switching in Mn-doped ZnO thin films; samples grown on Pt and Si show unipolar and bipolar switching behaviors, respectively. Fittings of the current-voltage curves and area dependence of the device resistance reveal the filamentary conduction in Pt/Mn:ZnO/Pt. On the other hand, the interfacial effect dominates in Pt/Mn:ZnO/Si, and its low resistance state exponentially relaxes toward the high resistance state in contrast to the good data retention in Pt/Mn:ZnO/Pt. Our results suggest that selecting electrodes dictates the resistive switching mechanism presumably by affecting the migration dynamics of oxygen vacancies.

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U2 - 10.1063/1.3428365

DO - 10.1063/1.3428365

M3 - Article

AN - SCOPUS:77953004840

SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

M1 - 192113

ER -

Electrode dependence of resistive switching in Mn-doped ZnO: Filamentary versus interfacial mechanisms

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