Electron-beam study of nanometer performances of the SAL 601 chemically amplified resist

Massimo Gentili; Annamaria Gerardino; Enzo Di Fabrizio

doi:10.1143/jjap.37.4632

Electron-beam study of nanometer performances of the SAL 601 chemically amplified resist

Massimo Gentili^*, Annamaria Gerardino, Enzo Di Fabrizio

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The SAL 601 chemically amplified resist has been characterized for electron-beam (e-beam) exposure with feature size down to 75 nm. The main resist process parameters such as the pre and post exposure baking time and temperature, the resist thickness and its development conditions, have been investigated and calibrated for sub-100nm resolution. Various writing strategies making use of test patterns comprising different nominal feature-size were also investigated. Dense lines, as fine as 75 nm, are achieved in a 350nm thick resist with exposure latitude of 0.4 nm/μC/cm² at 5OkV accelerating voltage. The sub-100 nm resolution was achieved with a 3σ value of 12 nm.

Original language	English (US)
Pages (from-to)	4632-4635
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	37
Issue number	8
DOIs	https://doi.org/10.1143/jjap.37.4632
State	Published - Aug 1998
Externally published	Yes

Keywords

Chemically amplified resists
Electron beam lithography
Nanostructures

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

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10.1143/jjap.37.4632

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title = "Electron-beam study of nanometer performances of the SAL 601 chemically amplified resist",

abstract = "The SAL 601 chemically amplified resist has been characterized for electron-beam (e-beam) exposure with feature size down to 75 nm. The main resist process parameters such as the pre and post exposure baking time and temperature, the resist thickness and its development conditions, have been investigated and calibrated for sub-100nm resolution. Various writing strategies making use of test patterns comprising different nominal feature-size were also investigated. Dense lines, as fine as 75 nm, are achieved in a 350nm thick resist with exposure latitude of 0.4 nm/μC/cm2 at 5OkV accelerating voltage. The sub-100 nm resolution was achieved with a 3σ value of 12 nm.",

keywords = "Chemically amplified resists, Electron beam lithography, Nanostructures",

author = "Massimo Gentili and Annamaria Gerardino and {Di Fabrizio}, Enzo",

year = "1998",

month = aug,

doi = "10.1143/jjap.37.4632",

language = "English (US)",

volume = "37",

pages = "4632--4635",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

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T1 - Electron-beam study of nanometer performances of the SAL 601 chemically amplified resist

AU - Gentili, Massimo

AU - Gerardino, Annamaria

AU - Di Fabrizio, Enzo

PY - 1998/8

Y1 - 1998/8

N2 - The SAL 601 chemically amplified resist has been characterized for electron-beam (e-beam) exposure with feature size down to 75 nm. The main resist process parameters such as the pre and post exposure baking time and temperature, the resist thickness and its development conditions, have been investigated and calibrated for sub-100nm resolution. Various writing strategies making use of test patterns comprising different nominal feature-size were also investigated. Dense lines, as fine as 75 nm, are achieved in a 350nm thick resist with exposure latitude of 0.4 nm/μC/cm2 at 5OkV accelerating voltage. The sub-100 nm resolution was achieved with a 3σ value of 12 nm.

AB - The SAL 601 chemically amplified resist has been characterized for electron-beam (e-beam) exposure with feature size down to 75 nm. The main resist process parameters such as the pre and post exposure baking time and temperature, the resist thickness and its development conditions, have been investigated and calibrated for sub-100nm resolution. Various writing strategies making use of test patterns comprising different nominal feature-size were also investigated. Dense lines, as fine as 75 nm, are achieved in a 350nm thick resist with exposure latitude of 0.4 nm/μC/cm2 at 5OkV accelerating voltage. The sub-100 nm resolution was achieved with a 3σ value of 12 nm.

KW - Chemically amplified resists

KW - Electron beam lithography

KW - Nanostructures

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DO - 10.1143/jjap.37.4632

M3 - Article

AN - SCOPUS:0032131546

SN - 0021-4922

VL - 37

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EP - 4635

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 8

ER -

Electron-beam study of nanometer performances of the SAL 601 chemically amplified resist

Abstract

Keywords

ASJC Scopus subject areas

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